Linearity Analysis of GME-TRC MOSFET Using SiO₂ as a Gate Insulator at High Temperature

Abstract

This paper analysis the impact of temperature variation on gate material engineered trapezoidal recessed channel (GME-TRC) MOSFET and trapezoidal recessed channel (TRC) MOSFET, using ATLAS: 3D device simulator [. The study focuses on the linearity and analog performance comparison of GME-TRC and TRC MOSFETs and the impact of temperature variations on some of the key parameters like drain current, transconductance and the optimum bias point in terms of gm3 (third order derivative of Ids-Vgs) and VIP3 has been analysed.