2022
DOI: 10.3390/photonics9030197
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Linearity-Enhanced Dual-Parallel Mach–Zehnder Modulators Based on a Thin-Film Lithium Niobate Platform

Abstract: In this work, we report a linearity-enhanced dual-parallel Mach–Zehnder modulator (MZM) on a thin-film lithium niobate platform. By setting the optical and electrical splitting ratios at a specific condition, the third-order intermodulation distortions (IMD3) of the child MZMs cancel with each other, whereas the first-order harmonics (FH) reach the maximum. Passive devices instead of thermo-optical switches are used to control the optical power and phase of the child MZMs, which greatly improve the device stab… Show more

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Cited by 16 publications
(8 citation statements)
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“…Finally, the experiment of digitizing an 1 GHz sinusoidal signal with a 20 GS/s optical pulse train was demonstrated. The detailed fabrication process of the devices can be found in our previous work [23]. The devices were fabricated on a x-cut lithium niobate-on-insulator with a 400-nm thick TFLN and a 3-𝜇m buried oxide.…”
Section: Device Fabrication and Experimental Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Finally, the experiment of digitizing an 1 GHz sinusoidal signal with a 20 GS/s optical pulse train was demonstrated. The detailed fabrication process of the devices can be found in our previous work [23]. The devices were fabricated on a x-cut lithium niobate-on-insulator with a 400-nm thick TFLN and a 3-𝜇m buried oxide.…”
Section: Device Fabrication and Experimental Resultsmentioning
confidence: 99%
“…Fig.3(a)shows the microscope image of the demonstrated ADC, and Fig.3(b) and (c) show the scanning electron microscope (SEM) image of the 5×5 MMI and the grating coupler. The detailed fabrication process of the devices can be found in our previous work[23]. The devices were fabricated on a x-cut lithium niobate-on-insulator with a 400-nm thick TFLN and a 3-𝜇m buried oxide.…”
mentioning
confidence: 99%
“…The device pattern was defined by electron beam lithography (EBL) and Argon-based inductively coupled plasma reactive ion etching. The detailed fabrication process can be found in our previous work [33].…”
Section: Methodsmentioning
confidence: 99%
“…Table 1 and 2 summarize the progress of different TFLN modulators with the MZI structure. [ 5,6,12,15,26–107 ] Figure summarizes the half‐wave voltage, device length, and bandwidth of etched and non‐etched TFLN modulators. Both these two kinds of modulators can realize a very high bandwidth.…”
Section: Mzi‐based Tfln Modulatormentioning
confidence: 99%