Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers

Janeiro, Ricardo; Gameiro, L.; Lopes, A.; Cardoso, S.; Ferreira, Ricardo; Paz, Elvira

doi:10.1109/tmag.2012.2202887

Cited by 14 publications

(4 citation statements)

References 9 publications

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“…The measured data clearly indicate a 1/f dominated regime at frequencies below 1 kHz. 6,8,12 For lower voltages (i.e., 163 mV-2.3 mV/MTJ and 250 mV-3.5 mV/MTJ), it can be observed that the device is in the thermal noise regime for frequencies above 1 kHz. This is in accordance with Eq.…”

Section: Methodsmentioning

confidence: 99%

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MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

Guo

Cardoso

Ferreira

et al. 2014

Journal of Applied Physics

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A MgO-based magnetic tunnel junction (MTJ) sensor including 72 MTJs in series with 50 × 50 μm2 was successfully microfabricated. Due to a two-step annealing strategy, a linear transfer curve was obtained. The tunneling magnetoresistance (TMR) value is as high as 159% and the sensitivity reaches 2.9%/Oe. The field detectivity exhibits the lowest value at 1 V bias current, attaining 1.76 nT/Hz0.5 and 170 pT/Hz0.5 for 10 Hz and 1 kHz, respectively. The results show that the sensor could be applied in non-destructive testing systems which are used for detecting small defects inside conductive materials.

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Section: Methodsmentioning

confidence: 99%

“…This area was filled with a series of MTJs with large areas allowing improved signal and detectivity. [5][6][7] At low frequencies, the noise spectrum is dominated by the 1/f noise and sometimes random telegraph noise (RTN). It was proved that the RTN is strongly dependent on particular bias voltages and can be minimized by the proper annealing procedures.…”

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confidence: 99%

MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

Guo

Cardoso

Ferreira

et al. 2014

Journal of Applied Physics

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“…Ni Fe D(nm) 10 4.0 6. 3 TB(K) 300 25 78 For THE SANDWICH structure of TMR and GMR, the varying magnetoresistance curve can usually be obtained by the following methods: during measurement, the shape anisotropy is used to make the direction of the magnetic field generated by the current perpendicular to the magnetization direction of the free layer, and the magnetization direction of the free layer and the reference layer are orthogonal to each other [43]; external induced magnetic field such as embedded permanent magnet [44,45], bias current line [46], rotating free layer; exchange bias action of antiferromagnetic coupling [47,48]; two magnetic anisotropic orthogonal materials are used as the free layer and the reference layer respectively [49][50][51]; the free layer is thinned until superparamagnetic particles are formed [52].…”

Section: Fe3o4mentioning

confidence: 99%

Research Progress of Current Sensor Based on Spin-Dependent Magnetoresistance Effect

Zhou

Li²,

Pan³

et al. 2023

J. Phys.: Conf. Ser.

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This article reviews the physical mechanism of spin-dependent magnetoresistance and its early application in sensors. The magnetic field performance generated by the current to be measured is explained. According to the realization of the magnetoresistance measurement of this characteristic, seven main indicators of the current sensor are summarized. Starting with the structure of magnetoresistance devices and magnetoresistance units of current sensors based on spin-dependent magnetoresistance effect, several design methods of sensors and their advantages and disadvantages are analyzed. Starting from the role of AMR, GMR and TMR in magnetoresistance cells, the structure of series and parallel arrays, permanent magnet bias, coil bias, coil reset, flux aggregator and superconducting ring are analyzed, and several design methods of sensors are summarized as well as their advantages and disadvantages. Finally, the possible development direction of the current sensor is forecasted based on the recently discovered spin correlation effect.

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“…To increase the detectivity, the MR elements are configured in a Wheatstone bridge (e.g., GMR sensor GF708 [61]) to provide differential output and integrated with magnetic flux concentrator (MFC) to enhance the signal. The state-of-the-art spintronic sensors exhibit the ability to detect ultimate weak magnetic fields (from nT down to pT) at room temperature [62][63][64][65][66], which fulfill the requirements of high sensitivity for smart-sensing applications.…”

Section: Spintronic Sensor Fabricationmentioning

confidence: 99%

Overview of Spintronic Sensors With Internet of Things for Smart Living

et al. 2019

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Smart living is a trending lifestyle that envisions lower energy consumption, sound public services, and better quality of life for human being. The Internet of Things (IoT) is a compelling platform connecting various sensors around us to the Internet, providing great opportunities for the realization of smart living. Spintronic sensors with superb measuring ability and multiple unique advantages can be an important piece of cornerstone for IoT. In this review, we discuss successful applications of spintronic sensors in electrical current sensing, transmission and distribution lines monitoring, vehicle detection, and biodetection. Traditional monitoring systems with limited sensors and wired communication can merely collect fragmented data in the application domains. In this paper, the wireless spintronic sensor networks (WSSNs) will be proposed and illustrated to provide pervasive monitoring systems, which facilitate the intelligent surveillance and management over building, power grid, transport, and healthcare. The database of collected information will be of great use to the policy making in public services and city planning. This work provides insights for realizing smart living through the integration of IoT with spintronic sensor technology.

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Linearization and Field Detectivity in Magnetic Tunnel Junction Sensors Connected in Series Incorporating 16 nm-Thick NiFe Free Layers

Cited by 14 publications

References 9 publications

MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

MgO-based magnetic tunnel junction sensors array for non-destructive testing applications

Research Progress of Current Sensor Based on Spin-Dependent Magnetoresistance Effect

Overview of Spintronic Sensors With Internet of Things for Smart Living

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