Linearly polarized and time-resolved cathodoluminescence study of strain-induced laterally ordered (InP)2/(GaP)2 quantum wires

Abstract

Articles you may be interested inStrong optical nonlinearity in strain-induced laterally ordered In 0.4 Ga 0.6 As quantum wires on GaAs (311)A substrate J. Appl. Phys. 98, 053711 (2005); 10.1063/1.2039999 Exciton localization and quantum efficiency-A comparative cathodoluminescence study of (In,Ga)N/GaN and GaN/(Al,Ga)N quantum wells Carrier relaxation and recombination in an InGaN/GaN quantum well probed with time-resolved cathodoluminescence Appl. Spatial variations in luminescence and carrier relaxation in molecular beam epitaxial grown (InP) 2 /(GaP) 2 quantum wires J. Vac. Sci. Technol. B 15, 1034 (1997); 10.1116/1.589388 Carrier relaxation and recombination in GaAs/AlGaAs quantum heterostructures and nanostructures probed with time-resolved cathodoluminescenceThe optical properties of ͑InP͒ 2 /͑GaP͒ 2 bilayer superlattice ͑BSL͒ structures have been examined with linearly polarized cathodoluminescence ͑CL͒, time-resolved CL spectroscopy, and cathodoluminescence wavelength imaging. An In and Ga composition modulation of ϳ18% forms during the metalorganic chemical vapor deposition growth of short period ͑InP͒ 2 /͑GaP͒ 2 bilayer superlattices. Transmission electron microscopy showed a period of ϳ800 Å along the ͓110͔ direction, resulting in coherently strained quantum wires. A strong excitation dependence of the polarization anisotropy and energy of excitonic luminescence from the quantum wires was found. The results are consistent with a phase-space and band filling model that is based on a k-p and two dimensional quantum confinement calculation which takes the coherency strain into account. CL images reveal that defects in the BSL originate from the GaAs substrate and/or the initial stages of InGaP growth. The effects of defects on the band filling, carrier relaxation kinetics, and nonlinear optical properties were examined.

Analysis by HR-STEM of the Strain Generation in InP after SiNx Deposition and ICP Etching

“…Raman spectroscopy [5][6][7], transmission electron microscopy through dislocation characterisation [8][9][10], X-Ray diffraction [11,12], cathodoluminescence (CL) [1,13,14], using even polarized CL have been reported. However, these techniques employ indirect methods to determine strain and, in general, have low spatial resolution compared to the requirements of recent device technology processing.…”