Linearly Polarized, Single-Mode Spontaneous Emission in a Photonic Nanowire

Munsch, Mathieu; Claudon, Julien; Bleuse, J.; Malik, Nitin S.; Dupuy, Emmanuel; Gérard, Jean‐Michel; Chen, Yuntian; Gregersen, Niels; Mørk, Jesper

doi:10.1103/physrevlett.108.077405

Cited by 51 publications

(58 citation statements)

References 28 publications

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“…Following Ref. 17, we conclude that the emitter is simultaneously coupled to the k and ? decay channels with a single decay rate that can be calculated as the average…”

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confidence: 66%

Quantum dot spontaneous emission control in a ridge waveguide

Stepanov

Delga

Zang

et al. 2015

Applied Physics Letters

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International audienceWe investigate the spontaneous emission (SE) of self-assembled InAs quantum dots (QDs) embedded in GaAs ridge waveguides that lay on a low index substrate. In thin enough waveguides, the coupling to the fundamental guided mode is vanishingly small. A pronounced anisotropy in the coupling to non-guided modes is then directly evidenced by normal-incidence photoluminescence polarization measurements. In this regime, a measurement of the QD decay rate reveals a SE inhibition by a factor up to 4. In larger wires, which ensure an optimal transverse confinement of the fundamental guided mode, the decay rate approaches the bulk value. Building on the good agreement with theoretical predictions, we infer from calculations the fraction β of SE coupled to the fundamental guided mode for some important QD excitonic complexes. For a charged exciton (isotropic in plane optical dipole), β reaches 0.61 at maximum for an on-axis QD. In the case of a purely transverse linear optical dipole, β increases up to 0.91. This optimal configuration is achievable through the selective excitation of one of the bright neutral excitons

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“…Following Ref. 17, we conclude that the emitter is simultaneously coupled to the k and ? decay channels with a single decay rate that can be calculated as the average…”

supporting

confidence: 66%

Quantum dot spontaneous emission control in a ridge waveguide

Stepanov

Delga

Zang

et al. 2015

Applied Physics Letters

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“…Again, we investigate first the Mie resonances (and, correspondingly, leaky modes) of the infinite NW, properly taking into account the dispersive behavior of the semiconductor in the spectral regime of interest as in Figure 3. This is shown in Figure 6 for an InP cylinder of radius R = 40 nm for vacuum wavelengths covering the visible and NIR domains: Within this spectral regime, such InP NWs support various lowest-order leaky/guided modes TE 01 , TM 01 , and HE 11 .…”

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confidence: 91%

“…The lowest (m = 1) electromagnetic (EM) mode is referred to as HE 11 , exhibiting no cutoff in the low energy limit ω = 0. Conversely, for fixed ω, this no-cutoff mode HE 11 is present also no matter how thin the NW might be.…”

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confidence: 99%

Unraveling the Janus Role of Mie Resonances and Leaky/Guided Modes in Semiconductor Nanowire Absorption for Enhanced Light Harvesting

2015

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Light absorption from finite semiconductor nanowires is investigated through a unified theoretical picture and numerical simulations. We first show theoretically from the electromagnetic mode dispersion relation and the Mie extinction cross sections for infinite nanowires that formally equivalent (Janus) formulas yield both leaky/guided modes and Mie resonances as, respectively, complex wave vector or complex frequency solutions that, in turn, overlap only at grazing angles with respect to the nanowire axis. For finite semiconductor nanowires, the angle of incidence becomes critical: absorption is dominated by Mie resonances at incident angles perpendicular (and oblique) to the nanowire axis; by contrast, guided mode excitation (if spectrally available) governs and enhances absorption at grazing incidence. Such theoretical prediction can be exploited to optimize nanowire designs for broad band and broad angle light harvesting applications.

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“…The PL decays can be perturbed by the presence of the higher order excitonic complexes, as the proximity of the p-shell is estimated to be lower than 20 meV in these structures [22]. Moreover, the dark excitonic states and spin-flip processes may occur [23].…”

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confidence: 99%

InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

Mrowiński

Dusanowski

Somers³

et al. 2017

Acta Phys. Pol. A

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In this work, InAs/InGaAlAs/InP quantum dashes have been investigated in terms of their optical, kinetic, and excitonic properties with respect to their application within the 1300 ± 40 nm spectral range, i.e. the Oband of the telecommunication technologies. We focused on the basic excitonic complexes such as neutral exciton, biexciton, and charged exciton, which have been identified by means of photoluminescence measurements. Emission and carriers' dynamics have been analyzed using rate equation model and fitting the experimental data obtained for both continuous-wave and pulsed excitation regimes. There has been found a significant impact of the charge carrier imbalance in the system and electron capturing rate on the dynamics of the optical and electronic transitions, which results in high occupation of the negatively charged trion state. Autocorrelation measurements show clear antibunching of trion emission for non-resonant excitation which indicates a potential of such kind of emitters as single photon sources for short-range quantum communication schemes.

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Linearly Polarized, Single-Mode Spontaneous Emission in a Photonic Nanowire

Cited by 51 publications

References 28 publications

Quantum dot spontaneous emission control in a ridge waveguide

Quantum dot spontaneous emission control in a ridge waveguide

Unraveling the Janus Role of Mie Resonances and Leaky/Guided Modes in Semiconductor Nanowire Absorption for Enhanced Light Harvesting

InAs on InP Quantum Dashes as Single Photon Emitters at the Second Telecommunication Window: Optical, Kinetic, and Excitonic Properties

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