1975
DOI: 10.1109/t-ed.1975.18163
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Linewidth variations in photoresist patterns on profiled surfaces

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Cited by 46 publications
(16 citation statements)
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“…2). For a proper lithography process control, in order to minimize the impact of PR thickness on CD uniformity, the PR thickness is chosen at an extreme (maxima or minima) of swing curve [5][6][7]. But the path length that the light travels increases with the angle of the light striking the PR.…”
Section: Introductionmentioning
confidence: 99%
“…2). For a proper lithography process control, in order to minimize the impact of PR thickness on CD uniformity, the PR thickness is chosen at an extreme (maxima or minima) of swing curve [5][6][7]. But the path length that the light travels increases with the angle of the light striking the PR.…”
Section: Introductionmentioning
confidence: 99%
“…However, photolithography has some major problems, several of which are caused by interference of the light in the resist layer. By interference of exposure light in the resist layer, the linewidth varies periodically with changes in resist thickness (1). The variation range of the linewidth has been reported as about 0.3 pm for Si substrate, depending on the substrate reflectivity and numerical aperture (NA) of the stepper lens (2).…”
Section: Introductionmentioning
confidence: 99%
“…Several factors contribute to the dimensional deviations on steps that include: resist thickness changes, standing -wave (interferometric) effects within the resist, side -wall reflections, and focus differences between the top and bottom of the step. Interferometric effects have received the most attention (1)(2)(3) and for several years were thought to give a rather complete picture of the complex, oscillating behavior of the observed dimensional deviations on steps. However, in recent years the use of dyed resists to reduce 'reflective notching' has suggested that this view is incomplete.…”
Section: Introductionmentioning
confidence: 99%