Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Li, Ying; Yin, Shiqi; Du, Yuchen; Zhang, Hui; Chen, Jiawang; Wang, Zihan; Wang, Shaotian; Qin, Qinggang; Zhou, Min; Li, Liang

doi:10.1039/d2nr04535d

Cited by 9 publications

(1 citation statement)

References 52 publications

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“…Due to its unique room-temperature liquid fluidity and conductivity, Ga metal has been widely used for the impressive applications of bioelectrodes and flexible electronic devices. − However, the overlooked self-limiting oxidation property of low-melting liquid Ga is also fascinating, and the generated oxide skin can be considered as a natural 2D oxide film. Natural self-limiting oxidation occurs on the surface of liquid Ga metal droplets following the Cabrera–Mott oxidation mechanism, , which provides a facile and general approach for the preparation of 2D Ga 2 O 3 . In this research field, the key issue is to solve the nondestructive transfer technology of oxide skins from a liquid Ga surface in a large scale.…”

Section: Introductionmentioning

confidence: 99%

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Liu

Guo

et al. 2023

ACS Appl. Nano Mater.

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Herein, we demonstrated the controllable synthesis of a centimeter-scale two-dimensional (2D) ZnO-doped Ga 2 O 3 nanostructure layer by a liquid Ga−Zn alloy printing strategy at near room temperature. Different from the liquid Ga−In and Ga− In−Sn alloys, the surface oxidation behavior of a liquid Ga−Zn alloy follows an obvious competition and cooxidation characteristics instead of the dominant oxidation characteristic of Ga, which could be effectively used to precisely tailor the Zn content of 2D Ga 2 O 3 films. With an increase of the nominal Zn content in the Ga−Zn alloy from 0 to 8 atom %, the real Zn content of 2D ZnOdoped Ga 2 O 3 films gradually increases and finally reaches a maximum saturated value of 16−18 atom % at the eutectic component of 3.87 atom %. Correspondingly, the transmittance and band gap of 2D ZnO-doped Ga 2 O 3 films could also be tuned by changes of the Zn content and crystallinity. The method proposed in this work provides a general route toward the doping synthesis of a diverse nonlayered 2D structure, which will shed light on the applications of various displays and deep-ultraviolet optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Liu

Guo

et al. 2023

ACS Appl. Nano Mater.

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Advances in Liquid Metal Printed 2D Oxide Electronics

Scheideler,

Nomura

2024

Adv Funct Materials

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Abstract2D metal oxides (2DMOs) have recently emerged as a high‐performance class of ultrathin, wide bandgap materials offering exceptional electrical and optical properties for a wide area of device applications in energy, sensing, and display technologies. Liquid metal printing represents a thermodynamically advantageous strategy for synthesizing 2DMOs by a solvent‐free and vacuum‐free scalable method. Here, recent progress in the field of liquid metal printed 2D oxides is reviewed, considering how the physics of Cabrera‐Mott oxidation gives this rapid, low‐temperature process advantages over alternatives such as sol‐gel and nanoparticle processing. The growth, composition, and crystallinity of a burgeoning set of 1–3 nm thick liquid metal printed semiconducting, conducting, and dielectric oxides are analyzed that are uniquely suited for the fabrication of high‐performance flexible electronics. The advantages and limitations of these strategies are considered, highlighting opportunities to amplify the impact of 2DMO through large‐area printing, the design of doped metal alloys, stacking of 2DMO to electrostatically engineer new oxide heterostructures, and implementation of 2D oxide devices for gas sensing, photodetection, and neuromorphic computing.

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Liquid Metal Integrated Circuit

Lin

2024

Handbook of Liquid Metals

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Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Abstract: Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation...

Cited by 9 publications

References 52 publications

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Advances in Liquid Metal Printed 2D Oxide Electronics

Liquid Metal Integrated Circuit

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Liquid-metal based flexible a-IZTO ultrathin films for electrical and optical applications

Abstract: Amorphous indium zinc tin oxide (a-IZTO) is a kind of transparent conductive oxide (TCO), which can be used in transparent electrodes, transistors, and flexible devices. At present, a key limitation...

Cited by 9 publications

References 52 publications

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga2O3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga2O3 Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Advances in Liquid Metal Printed 2D Oxide Electronics

Liquid Metal Integrated Circuit

Contact Info

Product

Resources

About

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices

Room-Temperature Preparation of Large-Area Transparent Two-Dimensional ZnO-Doped Ga₂O₃ Nanostructure-Based Layers: Implications for Optoelectronic Nanodevices