Liquid metals: an ideal platform for the synthesis of two-dimensional materials

Abstract

This tutorial review describes recently developed methods for the growth of two-dimensional materials using liquid-metal based synthesis approaches. The integration of these materials and their potential applications are also reviewed and discussed.

Liquid Metal-Templated Tin-Doped Tellurium Films for Flexible Asymmetric Pseudocapacitors

“…Recent studies unveiled interesting interfacial applications of these liquid metals, including using their liquid–liquid interfaces as platforms for the “self-templated” synthesis of nanoalloys. − We have previously shown that the liquid metal interfaces can induce an electrochemical deposition of bismuth telluride topological insulators by directly exposing EGaIn alloy to a precursor solution containing tellurium and bismuth ions . The synthesis of two-dimensional (2D) materials via liquid metal interfaces has also been demonstrated for manganese dioxide monolayers by galvanic replacement reactions, gallium phosphate by self-limiting combination reactions, 2D graphitic material by electrochemical deposition, and 2D bismuth oxide by metal expulsion. , The ability to engineer materials of distinct nanostructures via liquid metals reinvigorates research in a variety of areas such as flexible electronics and energy storage. − …”

Liquid metal-based electrosynthesis of stratified zinc–organic frameworks

“…[14][15][16] Electrifying the interface between the two liquids modulates the interfacial tension and results in enhanced surface enrichment of solute metals at the interface. [17][18][19][20] The electrocapillary-controlled surface enrichment on the surface of liquid alloys can be utilized as a potentially effective means to engage solute metals in interfacial chemical reactions, 21 e.g., to synthesize metal-organic frameworks (MOFs).…”

Mechanically transferred large-area Ga$_2$O$_3$ passivates graphene and suppresses interfacial phonon scattering

“…15 Recently, the surface of liquid metals has been used to synthesize large-area atomically thin materials with facile mechanical transfer onto other substrates. 7,[16][17][18][19] Indeed, Ga 2 O 3 has already been shown to be an excellent encapsulating layer for transition metal dichalcogenide crystals (TMDs), 20 preserving and even enhancing their optical properties.…”

“…The Gr was then etched into a Hall bar geometry 0.4 mm wide and 1.2 mm long, with multiple voltage electrodes spaced by 0.25 mm, and contacted by Ti/Au electrodes fabricated using conventional photolithography. Next, mm-scale ultrathin Ga 2 O 3 was prepared on a PPC film on a PDMS stamp (Gel-film, Gelpak) through a liquid metal "squeeze-printing" 19 technique. Finally, Ga 2 O 3 was deterministically transferred onto half of the Gr device.…”

“…1a-d). First, a mm-scale ultrathin Ga 2 O 3 film was prepared on a PPC film mounted on a PDMS stamp through a liquid metal printing technique known as "squeezeprinting" 19 (Fig. 1a).…”