Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence

Suda, Reiji; Yagi, Mamiko; Kojima, Akira; Mori, Nobuya; Shirakashi, Jun–ichi; Koshida, Nobuyoshi

doi:10.1016/j.mssp.2016.12.022

Cited by 10 publications

(7 citation statements)

References 50 publications

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“…Incident electrons with energy of 10 eV can penetrate 10 nm deep in solutions (Emfietzoglou et al, 2009), and reduce positive ions therein followed by the formation of nanoclusters and deposition. Thermodynamic investigation supports that the incident electron energy meets the requirement for preferential nucleation of atoms rather than their out-diffusion (Suda et al, 2017). The theoretical analysis based on the reaction diffusion equation suggests that the deposition rate depends mainly on the incident electron current density J e , and that it reaches a stationary value within 0.1 s after electron incidence (Suda et al, 2018).…”

Section: Emissive Properties and Applicationsmentioning

confidence: 94%

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Koshida

Nakamura

2019

Front. Chem.

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Recent topics of application studies on porous silicon (PS) are reviewed here with a focus on the emissive properties of visible light, quasiballistic hot electrons, and acoustic wave. By exposing PS in solvents to pulse laser, size-controlled nc-Si dot colloids can be formed through fragmentation of the PS layer with a considerably higher yield than the conventional techniques such as laser ablation of bulk silicon and sol-gel precursor process. Fabricated colloidal samples show strong visible photoluminescence (~40% in quantum efficiency in the red band). This provides an energy- and cost-effective route for production of nc-Si quantum dots. A multiple-tunneling transport mode through nc-Si dot chain induces efficient quasiballistic hot electron emission from an nc-Si diode. Both the efficiency and the output electron energy dispersion are remarkably improved by using monolayer graphene as a surface electrode. Being a relatively low operating voltage device compatible with silicon planar fabrication process, the emitter is applicable to mask-less parallel lithography under an active matrix drive. It has been demonstrated that the integrated 100 × 100 emitter array is useful for multibeam lithography and that the selected emission pattern is delineated with little distortion. Highly reducing activity of emitted electrons is applicable to liquid-phase thin film deposition of metals (Cu) and semiconductors (Si, Ge, and SiGe). Due to an extremely low thermal conductivity and volumetric heat capacity of nc-Si layer, on the other hand, thermo-acoustic conversion is enhanced to a practical level. A temperature fluctuation produced at the surface of nc-Si layer is quickly transferred into air, and then an acoustic wave is emitted without any mechanical vibrations. The non-resonant and broad-band emissivity with low harmonic distortions makes it possible to use the emitter for generating audible sound under a full digital drive and reproducing complicated ultrasonic communication calls between mice.

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Section: Emissive Properties and Applicationsmentioning

confidence: 94%

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Koshida

Nakamura

2019

Front. Chem.

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“…Spectroscopic characterizations 14 suggest that thin Si and Ge films deposited under electron incidence consist of very small nanoclusters. This is consistent with the nanoclusters size (about 10-20 nm) estimated from TEM images of a thin Si film deposited by a dripping mode.…”

Section: Deposition Mechanismmentioning

confidence: 99%

“…Judging from XPS and SIMS measurements, Cl contamination of deposited thin films was less than 300 ppm. 14 Although electroplating is useful as means for room temperature deposition of thin metal films, it is unavailable for semiconductor films because of high contaminations associated with gas evolutions. In electroplated thin semiconductor films, the Cl contamination is about 1% due to the influence of Cl 2 gas evolution and decomposition of the electrolyte at the anode electrode.…”

Section: Deposition Mechanismmentioning

confidence: 99%

“…[2][3][4][5] Though dots and nanowires of metals are directly formed, serious problems remain in EBID: both the purity and the uniformity of deposited thin films are insufficient because of incorporation of decomposed species into thin films and irradiation damages during the process. 4,5 We have reported application of quasiballistic hot electron emission from nanocrystalline silicon (nc-Si) diode 6,7 to reductive thin film deposition in dipping, [8][9][10][11] dripping, 12 and incidence 13,14 modes. In the incidence mode, salt solutions such as CuCl 2 , SiCl 4 , and GeCl 4 containing an objective ion are coated (∼100 nm in thickness) on a target substrate, and then irradiated with emitted quasiballistic electrons through a pressure-controlled gas space.…”

mentioning

confidence: 99%

“…The employed mean incident electron energy (∼10 eV) looks appropriate from viewpoints of both the penetration depth into solutions and the thermodynamic criterion for preferential nucleation of nanoclusters. 14 To clarify the deposition mechanism under reduction mode induced by electron injection, the quantitative and systematic modeling throughout the process from quasiballistic electron incidence, reduction, nucleation, and mass transport is presented here. Based on thermodynamic and reaction diffusion analyses, the deposition rate is formulated.…”

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confidence: 99%

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Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Suda

Kojima

Koshida

2018

ECS J. Solid State Sci. Technol.

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Highly reducing activity of quasiballistic hot electrons emitted from a nanocrystalline silicon (nc-Si) diode is verified in terms of liquid-phase thin film deposition. Incident electrons reduce positive ions in salt solutions coated on a target substrate, and then result in deposition of thin metal (Cu) and semiconducting (Si, Ge, and SiGe) films. This mechanism is investigated here throughout the process from electron incidence to thin film deposition. Thermodynamic criterion deduced from classical nucleation theory suggests that the output electron energy of the nc-Si emitter is suitable for promoting preferential reduction of target ions in solutions leading to the nuclei formation. In accordance with mass-transport analyses on generated nanoclusters, the most primary factor of thin film growth is the dose of incident electron. The formulated deposition rate rapidly increases and reaches a stationary value within 0.1 s after electron incidence. The theoretical dependency of the thin film thickness on the electron incidence time is consistent with the experimental results. Specific features of this scheme as an alternative approach for thin film deposition are discussed in comparison with the conventional dry and wet processes.

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Improved cold emission property of the multilayer porous silicon by modulating the porosity sequence

2020

Applied Surface Science

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Liquid-phase deposition of thin Si and Ge films based on ballistic hot electron incidence

Cited by 10 publications

References 50 publications

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Emerging Functions of Nanostructured Porous Silicon—With a Focus on the Emissive Properties of Photons, Electrons, and Ultrasound

Mechanism of Liquid-Phase Reductive Thin-Film Deposition under Quasiballistic Electron Incidence

Improved cold emission property of the multilayer porous silicon by modulating the porosity sequence

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