Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

Kumar, Arvind; Pal, Debjit; Bose, D. N.

doi:10.1007/bf02653332

Cited by 8 publications

(8 citation statements)

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“…All layers are of n-type conductivity and the electron concentration is decreased to 4×10 15 cm −3 . Another paper of Misprint in ligature due to oxygen in LPE grown InGaAs with Dy admixture (Kumar et al, 1995). He further states that Dy gettering not only results in decreased carrier concentration and increased mobility but also better morphology and lower etch pit density is achieved.…”

Section: Semiconductor Technologies 298mentioning

confidence: 96%

“…Typical LPE InP layers grown under these conditions posses electron concentrations above 10 17 cm −3 at room temperature. In addition to the above self-evident precautions, there are several methods to suppress residual impurity concentrations (Rhee & Bhattacharya, 1983;Kumar et al, 1995): -Prolonged baking of the growth solution above the growth temperature. A long bake-out under the dry hydrogen atmosphere leads to the removal of volatile impurities such as Zn, Mg, Cd, Te, and Se from the In melt by the evaporation.…”

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confidence: 99%

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Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Grym¹,

Procházková²,

Zavadil³

et al. 2010

Semiconductor Technologies

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Section: Semiconductor Technologies 298mentioning

confidence: 96%

mentioning

confidence: 99%

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Grym¹,

Procházková²,

Zavadil³

et al. 2010

Semiconductor Technologies

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Section: Present Statusmentioning

confidence: 99%

Semiconductor technologies

2009

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Semiconductor technologies continue to evolve and amaze us. New materials, new structures, new manufacturing tools, and new advancements in modelling and simulation form a breeding ground for novel high performance electronic and photonic devices. This book covers all aspects of semiconductor technology concerning materials, technological processes, and devices, including their modelling, design, integration, and manufacturing.High costs, long manufacturing cycles, and enormous increase in computing power are behind a recent rapid progress of the modelling, simulation, optimisation, and design of semiconductor devices. The first two chapters present the state-of-the-art in modelling of semiconductor processes and devices. Several examples are given: simulation of the switching characteristics of SiC GTO, MOSFET DC modelling for distortion analysis, or high-k dielectricsemiconductor modelling. VIIIOptical technologies are the future of communication systems. Chapter 14 is a review of a device engineering method to provide high functionality of passive nonlinear vertical-cavity devices exploiting saturable absorption in semiconductor MQWs. Chapter 15 is a summary of the stateof-the-art of all-optical flip-flops based on semiconductor technologies. Chapter 16 reviews the current development of optical detection technologies on silicon photonics platform. In chapter 17, the authors describe the design, fabrication technology, and device performance of InP Mach-Zehnder modulator monolithically integrated with semiconductor optical amplifier. In chapter 18, the authors propose a new approach to ultra-fast all-optical signal processing based on quantum dot devices. Chapter 19 discusses present status and future direction of all-optical digital processing through semiconductor optical amplifiers.Finally, chapter 20 presents a new approach to biomedical monitoring and analysis of selected human cognitive processes.

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“…As well as having larger concentrations, the donors prevail over acceptors also due to their lesser [4]) to be of less perfect purity than the constituent elements (In, P, etc) and hence, if present in the melt at higher quantities, RE admixture could introduce to the solid phase unwanted acceptors of its own. (iii) There are indications ( [1]) that affinity of RE atoms to donor species is distinctly higher than to acceptors. With increasing RE content in the melt, donors are progressively removed while acceptors remain and become dominant.…”

Section: Introductionmentioning

confidence: 96%

“…An alternative way of removing impurities consists in employment of the large chemical affinity of rareearth (RE) elements toward the contaminants. Silicides (RE 3 Si 5 or RESi 2 ), sulfides (RE 2 S 3 ), and other reaction products of RE and impurity atoms are stable and insoluble in the growth melt [1]. Due to their large radii, RE atoms are only exceptionally (the case of ytterbium and cerium in InP, as suggested by luminescence spectra [2,3]) incorporated into the host lattice.…”

Section: Introductionmentioning

confidence: 97%

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

Šrobár¹,

Procházková

2009

Cryst. Res. Technol.

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Rare-earth (RE) elements present in the growth melt of the LPE process are known to have a purifying effect on the grown layers of III-V compounds. The RE atoms exhibit high chemical affinity preferentially to shallow donors, forming insoluble aggregates that remain in the melt and do not, ordinarily, enter the solid phase. The aim of the paper is to simulate the situation, sometimes observed experimentally, where the gradual gettering of donor impurity, consequent upon increasing the RE content in the melt, leads to an inversion of the electrical conductivity type of the grown layer from n to p. Usefulness of the approach is demonstrated by interpreting results of an experimental work.

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Liquid phase epitaxy growth of InGaAs with rare-earth gettering: Characterization and deep level transient spectroscopy studies

Cited by 8 publications

References 16 publications

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Role of Rare-Earth Elements in the Technology of III-V Semiconductors Prepared by Liquid Phase Epitaxy

Semiconductor technologies

Inversion of conductivity type of III‐V compound layers in experiments with LPE growth from rare‐earth containing melts

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