Liquid-Phase Epitaxy of In× GA1−×As

Antypas, G. A.

doi:10.1149/1.2407329

Cited by 105 publications

(16 citation statements)

References 11 publications

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“…The black solid and black dotted lines are the calculated binodal and spinodal lines, respectively. The gray area above the solidus curve indicates the region where the liquid phase of (GaAs) x (GaSb) 1−x [19,40] and (InAs) x (GaAs) 1−x [45] appear experimentally.…”

Section: Resultsmentioning

confidence: 99%

Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As

Han¹,

Yeu²,

Park³

et al. 2020

J. Phys. D: Appl. Phys.

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This work proposes an efficient and accurate methodology of ab initio thermodynamics to predict phase diagrams of III–V pseudobinary systems. The innumerable configurations of solid solutions are efficiently considered while maintaining accuracy by calculating the energies of freely relaxed configurations with the combined methodology using density functional theory calculations and cluster expansion. Then, the thermodynamic properties are calculated following a grand canonical ensemble framework that takes into account the local compositional fluctuation. The local strain energy induced by this local compositional fluctuation is found to be independent of the configuration; hence, it is calculated separately and added to the energy of a freely relaxed configuration, which significantly reduces the computational cost. This novel methodology is applied to calculate the phase diagrams of Ga(As,Sb) and (In,Ga)As, showing a good agreement with previous experimental reports. Notably, the strain energy is indispensable to predict phase diagrams accurately. It implies both the validity and the applicability of this method to other III–V pseudobinary systems. From an understanding of the crucial role of the strain energy in phase separation, an intuitive prediction is suggested through a simple estimation of the strain energy using the ratio of lattice parameters between various III–V semiconductor materials.

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Section: Resultsmentioning

confidence: 99%

Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As

Han¹,

Yeu²,

Park³

et al. 2020

J. Phys. D: Appl. Phys.

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“…Article published online by EDP Sciences and available at http://dx.doi.org/10.1051/rphysap:019810016010100 Following Jordan and Ilegems [11] QIU-' and 03A9V are given by ' where X and Y are the Gaand P-molar fractions in the InGaAsP solid solution and 03A9InGap, QInGaAs@ QGaAsP and QInAsP are the experimental interaction coefficients of the ternary alloy specified in the subscripts ; their values are 3 250 [14], 2 000 [15], 1 000 [16] and 400 [10] cal., respectively.…”

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confidence: 99%

Equilibrium calculations for VPE-InGaAsP

Franchi¹,

Pelosi²,

Attolini³

1981

Rev. Phys. Appl. (Paris)

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2014 L'équilibre hétérogène du système InGaAsP/HCl/H2 a été étudié dans un domaine de température et de pression caractéristiques de l'épitaxie en phase vapeur (EPV) par la méthode des hydrures. Les prévisions théoriques sont comparées aux données expérimentales pour la croissance d'alliages GaInAsP ayant la même maille cristalline que le substrat InP. Les résultats présentés sont en bon accord avec quelques données expérimentales. Quelques cas de désaccord entre résultats thermodynamiques et résultats expérimentaux ou entre différentes valeurs expérimentales sont également discutés. Abstract. 2014 The heterogeneous equilibrium in the InGaAsP/HCl/H2 system has been studied at pressure and temperature conditions pertaining to the hydride-VPE growth. The results have been compared with the available experimental data on the growth of the above quaternary alloys lattice-matched to InP. A remarkably good agreement has been achieved with some existing data. Possible causes of discrepancies both between equilibrium and experimental results and between different experimental findings have been briefly discussed.

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“…Under the droplets, since there is much In adatoms, the growth is somehow like liquid phase epitaxy. 27,28) And the growth is much closer to equilibrium than the conventional MBE growth. As shown in the supplemental materials, there are generally two kinds of growth phenomena that happen under In droplets.…”

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confidence: 96%

High electron mobility in nearly-dislocation-free hexagonal InN

Chen

Sheng

et al. 2022

Appl. Phys. Express

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We demonstrate a recorded directed-probed electron mobility of ~4850 cm2/Vs in nearly-dislocation-free hexagonal InN at room temperature by Hall-effect measurement. Those extremely high quality InN are achieved through droplet-assisted epitaxy on GaN/sapphire template by molecular beam epitaxy. They behave as crystals with diameter of several micrometers, being confirmed to be nearly free of threading dislocation by transmission electron microscopy. The achievement of such high mobility InN provides promising opportunities for fabricating high speed electronic device.

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Liquid-Phase Epitaxy of In× GA1−×As

Cited by 105 publications

References 11 publications

Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As

Effect of local strain energy to predict accurate phase diagram of III–V pseudobinary systems: case of Ga(As,Sb) and (In,Ga)As

Equilibrium calculations for VPE-InGaAsP

High electron mobility in nearly-dislocation-free hexagonal InN

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