1993
DOI: 10.1016/0022-0248(93)90807-9
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Liquid phase epitaxy of lattice-matched KTa1−xNbxO3 grown on KTaO3 substrate

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Cited by 13 publications
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“…Subsequently, all essential properties can be tailored in wide ranges by using different combinations of materials, crystallographic orientations (cuts), and microstructures. 15 So far, KNbO 3 thin films can be synthesized by the following methods: metalorganic chemical vapor deposition (MOCVD), [16][17][18][19] pulsed-laser deposition, 10,20-25 sputtering, 26,27 liquid-phase epitaxy, [28][29][30] and solgel. [31][32][33] All these synthesis routes share similar disadvantages of high-temperature processing, requiring temperatures ranging between 600 °C and over 900 °C to obtain a crystalline KNbO 3 phase.…”
Section: Introductionmentioning
confidence: 99%
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“…Subsequently, all essential properties can be tailored in wide ranges by using different combinations of materials, crystallographic orientations (cuts), and microstructures. 15 So far, KNbO 3 thin films can be synthesized by the following methods: metalorganic chemical vapor deposition (MOCVD), [16][17][18][19] pulsed-laser deposition, 10,20-25 sputtering, 26,27 liquid-phase epitaxy, [28][29][30] and solgel. [31][32][33] All these synthesis routes share similar disadvantages of high-temperature processing, requiring temperatures ranging between 600 °C and over 900 °C to obtain a crystalline KNbO 3 phase.…”
Section: Introductionmentioning
confidence: 99%
“…The high synthesis temperatures cause typical problems such as difficulties to control potassium stoichiometry due to high volatilization of potassium oxide, interdiffusion between film and the substrate, 20,21,24 formation of interphase layers (particularly in the case of using MgO substrate), 21,24 and multidomain formation during cooling to room temperature. 16,[20][21][22][23]27,29,30 The presence of pyrochlore and/or amorphous phases, as well as porosity, was reported particularly for the KNbO 3 films synthesized by the sol-gel method. 32,33 In addition, liquid-phase epitaxy (LPE) is not well suited for films with thickness under 1 µm.…”
Section: Introductionmentioning
confidence: 99%
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“…The growth of barium-doped KT was already reported from our laboratory [10,11], but to our knowledge there are no reports on the investigations on the growth of bulk homogeneously-doped KT:Ba crystals. The investigations on the growth of KTN and KNTN thin films have been reported by several authors [12][13][14][15][16][17][18]. For the practical realization of optical devices such as waveguides and microresonators wide area (5 Â 5 mm 2 ) with flat as grown epilayers of uniform composition are needed.…”
Section: Introductionmentioning
confidence: 98%