“…So far, KNbO 3 thin films can be synthesized by the following methods: metalorganic chemical vapor deposition (MOCVD), − pulsed-laser deposition, ,− sputtering, , liquid-phase epitaxy, − and sol−gel. − All these synthesis routes share similar disadvantages of high-temperature processing, requiring temperatures ranging between 600 °C and over 900 °C to obtain a crystalline KNbO 3 phase. The high synthesis temperatures cause typical problems such as difficulties to control potassium stoichiometry due to high volatilization of potassium oxide, interdiffusion between film and the substrate, ,, formation of interphase layers (particularly in the case of using MgO substrate), , and multidomain formation during cooling to room temperature. ,− ,,, The presence of pyrochlore and/or amorphous phases, as well as porosity, was reported particularly for the KNbO 3 films synthesized by the sol−gel method. , In addition, liquid-phase epitaxy (LPE) is not well suited for films with thickness under 1 μm …”