Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

Saidov, A. S.; Usmonov, Sh. N.; Saidov, M. S.

doi:10.1134/s106378261504020x

Cited by 2 publications

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“…ese conclusions are based on the fact that we have previously observed the appearance of such peaks of atoms of Si 2 molecules in the photoluminescence spectrum of solid solutions of Si and binary compounds, such as (Si 2 ) 1-x (GaAs) x at 1.33 eV [24] and (Si 2 ) 1-x (ZnSe) x at 1.67 eV [25], as well as a similar luminescence peak of atoms of ZnSe molecules in the photoluminescence spectrum of the (GaAs) 1-x (ZnSe) x solid solution [26] at 2.67 eV. A certain conformity to natural laws is observed here: the wider the band gap of the base material is, into which the Si 2 molecules are introduced as an impurity or form a solid solution with it, the higher the energies of Si atoms give a peak in the photoluminescence spectrum.…”

Section: Photoluminescence Spectrum Of the Solid Solutionmentioning

confidence: 99%

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Saidov

Saparov

Usmonov

et al. 2021

Advances in Condensed Matter Physics

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Epitaxial layers of the solid solution of molecular substitution (Si2)1-x(GaP)x (0 ≤ x ≤ 1) on Si (111) and GaP (111) substrates are grown by liquid-phase epitaxy from an Sn solution-melt. Such graded-gap solid solutions allow the integration of well-established silicon technology with the advantages of III-V semiconductor compounds. The structural features, the distribution of the atoms of the components over the thickness of the epitaxial layer, the photoluminescence spectrum of the (Si2)1-x(GaP)x (0 ≤ x ≤ 1) solid solution, and the electroluminescence of the structure n-GaP-n+-(Si2)x (GaP)1-x (0 ≤ x ≤ 0.01) have been investigated. It is shown that the layers of the solid solution have a perfect single-crystal structure with the crystallographic orientation (111), with the size of subcrystallites ∼ 39 ± 1 nm. The epitaxial layer (Si2)1-x(GaP)x (0 ≤ x ≤ 1) is a graded-gap layer with a smoothly and monotonically varying composition from silicon to 100% GaP. The energy levels of atoms of Si2 molecules which are located 1.47 eV below the bottom of the conduction band of gallium phosphide are revealed. Red emission of n-GaP-n+-(Si2)x(GaP)1-x (0 ≤ x ≤ 0.01) structure which is caused by electron transitions with participation of energy levels of Si2 atoms is detected.

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Section: Photoluminescence Spectrum Of the Solid Solutionmentioning

confidence: 99%

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Saidov

Saparov

Usmonov

et al. 2021

Advances in Condensed Matter Physics

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Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

2016

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Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

Cited by 2 publications

References 12 publications

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

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Liquid-phase epitaxy of the (Si2)1 − x − y (Ge2) x (GaAs) y substitutional solid solution (0 ≤ x ≤ 0.91, 0 ≤ y ≤ 0.94) and their electrophysical properties

Cited by 2 publications

References 12 publications

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x 0 ≤ x ≤ 1

Direct solar conversion to electricity nanoscale effects in pSi–n(Si2)1–x (ZnSe) x (0 ≤ x ≤ 0.01) of solar cells

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Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$

Investigation of the Crystallographic Perfection and Photoluminescence Spectrum of the Epitaxial Films of (Si2)1-x(GaP)x $(0 \leq x \leq 1)$