Liquid phase formation in the system AlN–Al2O3–Y2O3. Part I: Experimental investigations

Neher, R.; Herrmann, Matthias; Fabrichnaya, Olga; Pavlyuchkov, D.; Seifert, H. J.

doi:10.1016/j.jeurceramsoc.2013.04.028

Cited by 12 publications

(2 citation statements)

References 16 publications

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“…37 When Y 2 O 3 is incorporated into the AlN phase, Y 3 Al 5 O 12 , YAlO 3 or Y 4 Al l2 O 9 phases are formed in the AlN after it is sintered at high temperatures. 8,[37][38][39][40] The yttriumcontaining oxides have stronger resistance to etching by the KOH solution than AlN. Consequently, white yttrium-containing oxide crystals remained after the 30 minutes etching period, which led to increased surface roughness, as shown in Fig.…”

Section: (C2)mentioning

confidence: 99%

Adhesion Enhancement of a Plated Copper Layer on an AlN Substrate Using a Chemical Grafting Process at Room Temperature

Shen

Dow

2014

J. Electrochem. Soc.

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AlN substrates have been extensively used for heat dissipation, especially in high-power light-emitting diodes (LEDs). However, the AlN substrate is an electric insulator and thus needs to be metalized to serve as an electric circuit carrier and heat conductor for LED packaging. Herein, we propose a wet process that can be performed at room temperature to metallize AlN substrates. The wet metallization process involves copper electroless deposition and copper electroplating. The catalyst used for the copper electroless deposition was PdCl 2 , which was chemically grafted onto the AlN surface. The chemical grafting agent was 3-(2-aminoethylamino)propyltrimethoxysilane (APTMS). Before the chemical grafting step, an etching step in KOH solution was critical for good adhesion of the plated copper layer. The electroless copper depositions were catalyzed using chemically grafted Pd and a commercial Sn/Pd colloid. An adhesion comparison test of the plated copper layers was performed to demonstrate that the copper adhesion performance obtained with the chemically grafted Pd process was substantially better than that obtained with the commercial Sn/Pd colloid process.

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Section: (C2)mentioning

confidence: 99%

Adhesion Enhancement of a Plated Copper Layer on an AlN Substrate Using a Chemical Grafting Process at Room Temperature

Shen

Dow

2014

J. Electrochem. Soc.

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“…Têm-se observado que as temperaturas de fusão, as composições de aditivos e as taxas de resfriamento são os principais parâmetros que determinam a formação da microestrutura e permitem uma compreensão do processo de sinterização (45) .…”

Section: Aditivosunclassified

Sinterização e caracterização mecânica e microestrutural de cerâmicas de SiC aditivadas com misturas de AIN/Dy2O3 e AIN/Yb2O3

Santos¹

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Microstructural characteristics and oxidation behavior of Y2O3-doped γ-AlON

Feng

2015

J Mater Sci

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Liquid phase formation in the system AlN–Al2O3–Y2O3. Part I: Experimental investigations

Cited by 12 publications

References 16 publications

Adhesion Enhancement of a Plated Copper Layer on an AlN Substrate Using a Chemical Grafting Process at Room Temperature

Adhesion Enhancement of a Plated Copper Layer on an AlN Substrate Using a Chemical Grafting Process at Room Temperature

Sinterização e caracterização mecânica e microestrutural de cerâmicas de SiC aditivadas com misturas de AIN/Dy2O3 e AIN/Yb2O3

Microstructural characteristics and oxidation behavior of Y2O3-doped γ-AlON

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