Liquid Phase Isolation of SnS Monolayers with Enhanced Optoelectronic Properties

Abstract

Recent advances in atomically thin two dimensional (2D) anisotropic group IV A -VI metal monochalcogenides (MMCs) and their fascinating intrinsic properties and potential applications are hampered due to an ongoing challenge of monolayer isolation. Among the most promising MMCs, tin (II) sulfide (SnS) is an earth-abundant layered material with tunable bandgap and anisotropic physical properties, which render it extraordinary for electronics and optoelectronics. To date, however, the successful isolation of atomically thin SnS single layers at large quantities has been challenging due to the presence of strong interlayer interactions, attributed to the lone-pair electrons of sulfur. Here, a novel liquid phase exfoliation approach is reported, which enables the overcome of such strong interlayer binding energy. Specifically, it demonstrates that the synergistic action of external thermal energy with the ultrasound energy-induced hydrodynamic force in solution gives rise to the systematic isolation of highly crystalline SnS monolayers (1L-SnS). It is shown that the exfoliated 1L-SnS crystals exhibit high carrier mobility and deep-UV spectral photodetection, featuring a fast carrier response time of 400 ms. At the same time, monolayer-based SnS transistor devices fabricated from solution present a high on/off ratio, complemented with a responsivity of 6.7 × 10 −3 A W −1 and remarkable stability upon prolonged operation in ambient conditions. This study opens a new avenue for large-scale isolation of highly crystalline SnS and other MMC manolayers for a wide range of applications, including extended area nanoelectronic devices, printed from solution.

Adsorption Mechanisms of TM3 (TM = Mo, Ru, Au)-Decorated Tin Sulfide Monolayers for the Decomposition of Gas Components under Fault Conditions in Oil-Immersed Transformers

“…In the last five years, significant progress has been made in developing new synthesis methods, exploring novel structures and properties, and driving innovation and commercialization [ 18 , 19 ]. SnS, an IV-group metal sulfide, not only possesses abundant reserves, affordability, environmental friendliness, and good stability but also stands out as one of the rare materials exhibiting P-type semiconductor properties in its natural state [ 20 , 21 , 22 , 23 , 24 ]. Additionally, SnS has a large specific surface area, strong carrier capacity, and its bandgap and electronic properties can be controlled through nanoparticle doping [ 23 ].…”

“…SnS, an IV-group metal sulfide, not only possesses abundant reserves, affordability, environmental friendliness, and good stability but also stands out as one of the rare materials exhibiting P-type semiconductor properties in its natural state [ 20 , 21 , 22 , 23 , 24 ]. Additionally, SnS has a large specific surface area, strong carrier capacity, and its bandgap and electronic properties can be controlled through nanoparticle doping [ 23 ]. These characteristics endow SnS with significant potential in optoelectronic devices, electrochemical sensors, and friction nanogenerators [ 25 , 26 , 27 , 28 ].…”

Stability of mechanically exfoliated layered monochalcogenides under ambient conditions

“…Layered monochalcogenides (LMs) are among the potential materials for fabricating novel lowdimensional semiconductor devices. They have potential applications in photovoltaic [1][2][3][4][5][6][7][8][9][10] , thermoelectric, and energy storage devices [11][12][13] , transistors [14][15] , photodetectors [16][17][18] , devices utilizing piezoelectricity 11,[19][20] , water splitting [21][22][23] , ferroelectricity 11,24 , optoelectronics [25][26][27][28][29] , memory devices 30 , spintronics 31 , nanotubes and nanowires [32][33][34] .…”

High-Pressure Synthesis of Single-Crystalline SnS Nanoribbons

“…The well-established mechanical cleaving method was unable to isolate thin layers of SnS due to the strong interlayer interaction of SnS that resulted from the lone pair electrons of the Sn atoms that induce substantial electron distribution and electronic coupling between adjacent layers . Liquid-phase exfoliation can yield few-layer SnS; however, the flakes are typically irregular in shape, and the size is in the range of 1 μm. ,, Vapor-phase synthesis of SnS includes chemical vapor deposition and physical vapor deposition, but they usually failed to yield high-quality thin SnS because of the formation of uncontrolled grain orientations, irregular shapes, defects, and impurities. , In addition, SnS has a strong tendency toward vertical (out-of-plane) growth rather than lateral growth due to the preferential deposition of Sn/S atoms on the existing SnS surface over the surrounding substrate surface, which causes a rapid flake thickening and makes it difficult to obtain large size and ultrathin SnS. , Consequently, obtaining large size and ultrathin SnS with high crystallinity, a well-defined grain orientation, and reduced dimensionality remains a challenge.…”

“…15 Liquid-phase exfoliation can yield few-layer SnS; however, the flakes are typically irregular in shape, and the size is in the range of 1 μm. 6,16,17 Vapor-phase synthesis of SnS includes chemical vapor deposition and physical vapor deposition, but they usually failed to yield high-quality thin SnS because of the formation of uncontrolled grain orientations, irregular shapes, defects, and impurities. 9,14 In addition, SnS has a strong tendency toward vertical (out-of-plane) growth rather than lateral growth due to the preferential deposition of Sn/S atoms on the existing SnS surface over the surrounding substrate surface, which causes a rapid flake thickening and makes it difficult to obtain large size and ultrathin SnS.…”