2006
DOI: 10.1134/s1023193506070032
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Lithium intercalation into amorphous-silicon thin films: An electrochemical-impedance study

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Cited by 45 publications
(33 citation statements)
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“…This fact, which is indirectly confirmed in the experiment [26], is apparently explained by the presence of a large number of potential barriers for hopping of lithium atoms in amorphous silicon and the ease of diffusion of lithium atoms through barriers of minimum height.…”
Section: Theoretical Study Of the Diffusion 145mentioning
confidence: 62%
“…This fact, which is indirectly confirmed in the experiment [26], is apparently explained by the presence of a large number of potential barriers for hopping of lithium atoms in amorphous silicon and the ease of diffusion of lithium atoms through barriers of minimum height.…”
Section: Theoretical Study Of the Diffusion 145mentioning
confidence: 62%
“…Since the penetration depth propagates deeper in the more-curved geometry, given an identical frequency, the transition in Effect of particle size distribution -The effect of heterogeneity in solid-state diffusion length, l , in particles appears in the overall impedance, Z , given by Equation (19). The dimensionless parameters required in the model are taken from literature values [15,27], and a lognormal PDF is employed to describe the distribution in l .…”
Section:  mentioning
confidence: 99%
“…While theoretical formulae of the BD impedance have been derived for a thin film electrode and nanoparticle electrodes with some model particle geometries [2,6,12,13,15,16], they have not been widely applied by experimentalists. In most applications, only the original Warburg impedance model and an one-dimensional BD impedance model have been exclusively used without considering the actual curved particle shape and particle size distribution in interpreting diffusion impedance [7][8][9][10][17][18][19]. Likewise, only these two models are built into commercial data-processing software products (e.g.…”
Section: Introductionmentioning
confidence: 99%
“…Схема представляет собой последовательное соединение сопротивления R 0 , двух параллельных комбинаций сопротивления и элементов с постоянным сдвигом фазы (R 1 CPE 1 ) и (R 2 CPE 2 ), а также последовательно включенного элемента CPE 3 . Такие же или близкие эквивалентные схемы для кремниевых или композитных электродов использовались в работах [12,[18][19][20]. Импеданс элемента с постоянным сдвигом фазы рассчитывается по формуле…”
Section: импедансные измерения кремниевых образцовunclassified
“…Измеренный в таких условиях коэффициент диффузии является концентрационнозависимой величиной, и для него используется термин химический, или эффективный, коэффициент диффузии D [11]. Для корректного нахождения D стараются использовать электроды из чистого кремния без дополнительных компонент, чаще всего в виде пленок аморфного Si [12,13].…”
Section: Introductionunclassified