Lithium-related states as deep electron traps in ZnO

Lopatiuk, O.; Chernyak, Leonid; Osinsky, A.; Xie, Jun

doi:10.1063/1.2136348

Cited by 65 publications

(42 citation statements)

References 24 publications

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“…EBIC measurements carried out on bulk ZnO substrates containing no lithium did not reveal any noticeable increase of L with t (up to 3600 s), suggesting that the presence of Li is important for the observed behavior (11).…”

Section: Electron Injection In Bulk Zno Substratesmentioning

confidence: 99%

“…After a single EBIC line-scan was completed (12 seconds), the excitation of the sample was continued by moving the electron beam back and forth along the same line for the total time of ~ 2800 seconds. EBIC measurements were periodically repeated to extract the values of minority carrier diffusion length, L, as a function of the duration of electron beam irradiation, t (11,13). As displayed in Fig.…”

Section: Electron Injection In Bulk Zno Substratesmentioning

confidence: 99%

“…Our recent findings indicate that the latter parameter in ZnO can be noticeably enhanced by electron injection. The observed novel effect was attributed to electron trapping on impurity-related levels (10,11).…”

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confidence: 99%

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Studies of Electron Trapping in ZnO Semiconductor

et al. 2010

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It has been recently discovered that electron injection into Phosphorus-, Lithium-, Antimony-or Nitrogen-doped ZnO semiconductor, using electron beam from a Scanning Electron Microscope, as well as a forward bias application to the p-n junction or Schottky barrier, leads to a multiple-fold increase of minority carrier diffusion length and lifetime (1-4). It has also been demonstrated that forward biasing a ZnO-based photovoltaic detector results in a several-fold responsivity enhancement due to a longer minority carrier diffusion length in the detector's p-region as a result of electron injection (5, 6). The observed electron injection effects were attributed to the charging of the metastable centers associated with the above-referenced impurities.With p-type doping of ZnO becoming possible, it is very likely that minority carrier (bipolar) devices such as LEDs, laser diodes, and transparent p-n junctions can be achieved in the near future (7,8,9). Besides effective p-type doping and robust ohmic contact fabrication, attaining the optimum performance of bipolar devices hinges upon overcoming an additional challenge -a short minority carrier diffusion length (usually ≤ 1µm), which is common to direct band gap semiconductors. Given the fact that the diffusion length is a critical parameter defining performance of p-n junction devices, it is imperative to find ways for its improvement. Our recent findings indicate that the latter parameter in ZnO can be noticeably enhanced by electron injection. The observed novel effect was attributed to electron trapping on impurity-related levels (10, 11). Electron injection in bulk ZnO substratesThe experiments were carried out on commercially available (Tokyo Denpa (TD)) bulk ZnO substrates grown by hydrothermal technique. Secondary Ion Mass Spectroscopy (SIMS) measurements performed on these substrates revealed the presence of lithium (Li) in the crystal on the level of ~ 4x10 16 cm -3 (Li is often added to ZnO to increase the resistivity of initially n-type samples) (12). Room temperature Hall measurements showed the samples to be a weak n-type with an electron concentration of ~ 10 14 cm -3 and mobility of ~ 150 cm 2 /Vs. The samples under investigation were cleaved perpendicular to c-plane thus exposing the non-polar a-plane of ZnO. This was motivated by the observations that the latter crystallographic plane results in a better quality of Schottky contacts, as opposed to those deposited on the c-plane. Schottky barriers were, therefore, fabricated by electron beam evaporation of 100 nm-thick Au layer on ZnO a-plane and subsequent lift-off.The experiments were carried out in-situ in a Philips XL30 Scanning Electron Microscope, which is integrated with a Gatan MonoCL3 cathodoluminescence system allowing wavelength-dependent and temperature-dependent optical measurements. A sample temperature in the cathodoluminescence measurements varied from 25 to 125 o C. For each temperature, periodic CL measurements were carried out under an SEM magnification of 4,000 at different locat...

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Section: Electron Injection In Bulk Zno Substratesmentioning

confidence: 99%

Section: Electron Injection In Bulk Zno Substratesmentioning

confidence: 99%

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Studies of Electron Trapping in ZnO Semiconductor

et al. 2010

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“…͑1͒ gives energies of 0. 16 valence band edge was found to be introduced by 100-keV proton implantation. 17 Thus, we believe that the 0.15-eV center, introduced by electron irradiation in HYD ZnO, may also be a hole trap.…”

Section: E T = Kt M Ln͑t M 4 /␤͒ ͑1͒mentioning

confidence: 99%

“…Recently, a Li-related acceptor state with a thermal activation energy of approximately 0.26 eV in a similar Tokyo Denpa ZnO sample was determined to play a key role in electron trapping phenomena. 16 Thus, we tentatively assign the 0.24-eV center to Li Zn acceptors. Also, the weak 0.30-eV center in the asgrown sample could possibly be related to oxygen vacancies, as reported in earlier DLTS studies on VP and HYD ZnO samples.…”

Section: E T = Kt M Ln͑t M 4 /␤͒ ͑1͒mentioning

confidence: 99%

Electron irradiation induced deep centers in hydrothermally grown ZnO

Fang

Claflin

Look

et al. 2007

Journal of Applied Physics

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An n-type hydrothermally grown ZnO sample becomes semi-insulating (ρ~108 Ω cm) after 1-MeV electron-irradiation. Deep traps produced by the irradiation were studied by thermally stimulated current spectroscopy. The dominant trap in the as-grown sample has an activation energy of 0.24 eV and is possibly related to LiZn acceptors. However, the electron irradiation introduces a new trap with an activation energy of 0.15 eV, and other traps of energy 0.30 and 0.80 eV, respectively. From a comparison of these results with positron annihilation experiments and density functional theory, we conclude that the 0.15-eV trap may be related to VZn.

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