Abstract:Fabrication, characterization, and analysis of an ultra-broadband lithography-free absorber is presented. An over 94% average absorption is experimentally achieved in the wavelength range of 450-1400 nm. This ultra-broadband absorption is obtained by a simple annealed tri-layer metal-insulator-metal (MIM) configuration. The metal used in the structure is Manganese (Mn), which also makes the structure costeffective. It is shown that the structure retains its high absorption for TM polarization, up to 70 degrees… Show more
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