Lithography in a quantum world

Levinson, Harry

doi:10.35848/1347-4065/acb8be

Cited by 10 publications

(6 citation statements)

References 56 publications

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“…Another revolutionary concept in research is the use of quantum technology in lithography, which leverages quantum mechanics for sub-wavelength resolution. These technologies could steer lithography in a new direction [ 55 ] while achieving atomic resolution in semiconductor nodes.…”

Section: Conclusion and Future Outlookmentioning

confidence: 99%

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Hassaan,

Saleem,

Singh

et al. 2024

Materials

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Photoresists are fundamental materials in photolithography and are crucial for precise patterning in microelectronic devices, MEMS, and nanostructures. This paper provides an in-depth review of recent advancements in positive photoresist research and development, focusing on discussion regarding the underlying mechanisms governing their behavior, exploring innovative fabrication techniques, and highlighting the advantages of the photoresist classes discussed. The paper begins by discussing the need for the development of new photoresist technologies, highlighting issues associated with adopting extreme ultraviolet photolithography and addressing these challenges through the development of advanced positive-tone resist materials with improved patterning features, resolution, and sensitivity. Subsequently, it discusses the working mechanisms and synthesis methods of different types and subtypes of photoresists, starting from non-chemically amplified, organic, and inorganic–organic hybrid photoresists and progressing to dry film resists, with an emphasis on the upsides of each. The paper concludes by discussing how future research in the field of lithography—prioritizing concerns related to environmental impacts, improved photoresist material and properties, and utilization of advanced quantum technology—can assist with revolutionizing lithography techniques.

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Section: Conclusion and Future Outlookmentioning

confidence: 99%

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Hassaan,

Saleem,

Singh

et al. 2024

Materials

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“…Lithographers have empirically described electron blur as a degradation of the latent image in the photoresist as if it were exposed by an aerial image more blurry than expected . Other consequences of blurry aerial image are worse sidewall roughness and critical dimension uniformity of the photoresist pattern both of which have an impact on functionality and defectivity of semiconductor devices. , Improving the fundamental understanding of electronic processes in photoresist is therefore key to developing novel photosensitive materials that can specifically tackle electron blur and disentangle it from other resolution-limiting phenomena. Assessment of the electron blur is technologically relevant even in scanning electron microscopic (SEM) inspection of photoresist patterns, which is the workhorse technique for process control in high-volume manufacturing of semiconductor devices.…”

Section: Introductionmentioning

confidence: 99%

Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20–450 eV

Fallica

Mahne²,

Conard

et al. 2023

ACS Appl. Mater. Interfaces

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The blur caused by the nonzero mean free path of electrons in photoresists exposed by extreme ultraviolet lithography has detrimental consequences on patterning resolution, but its effect is difficult to quantify experimentally. So far, most mean free path calculations use the dielectric formalism, which is an approximation valid in the optical limit and fails at low kinetic energy. In this work, we used a modified substrate-overlayer technique that exploited the attenuation of the Si 2p core level originating specifically from the native silicon dioxide to evaluate the attenuation of electrons traveling through 2 and 4 nm of photoresist overlayers to provide a close estimation of the inelastic mean free path relevant for photoresist lithography patterning and for electron microscopy. The photoemission spectra were collected in the proximity of the Si 2p edge (binding energy ∼101 eV) using synchrotron light of energy ℏω ranging between 120 and 550 eV. The photoresist films were prototypical chemically amplified resists based on organic copolymer of poly hydroxystyrene and tertbutyl methacrylate with and without triphenyl sulfonium perfluoro-1butanesufonate photoacid generator and trioctylamine quencher. The inelastic mean free path of electrons, in the range that is relevant for photoresist exposure in extreme ultraviolet lithography (20−92 eV), was found to be between 1 and 2 nm. At higher kinetic energy, the mean free path increased, consistently with the well-known behavior. The presence of the photoacid generator and quencher did not change the mean free path, within experimental error. Our results are discussed and compared with the existing literature on organic molecules measured via dielectric formalism and electron transmission experiments.

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“…On one hand, a minimal structure size of 3 nm to 200 nm can already be realised using the aforementioned high-end systems of FIB [ 18 , 19 ], EBL [ 20 ] and extreme ultra violet photolithography [ 21 , 22 ]. Thus, the clear advantage of these systems is their resolution in the nanometre range.…”

Section: Introductionmentioning

confidence: 99%

Investigation of Inkjet-Printed Masks for Fast and Easy Photolithographic NIL Masters Manufacturing

Burkert,

Eder,

Heinrich

2023

Micromachines

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Modern optical systems often require small, optically effective structures that have to be manufactured both precisely and cost-effectively. One option to do this is using nanoimprint lithography (NIL), in which the optical structures are replicated as masters using a stamping process. It would also be advantageous to manufacture the master structures quickly and easily. A master manufacturing process based on a photolithographic image of an inkjet-printed mask is presented and investigated in this paper. An essential element is that a deliberate blurring of the printed structure edge of the mask is used in the photolithographic process. Combined with the use of a non-linear photoresist, this allows for improved edge geometries of the master structure. We discuss the inkjet-printed photomask, the custom photolithography system to prevent imaging of the printing dot roughness and the manufacturing processes of NIL polymer masks as well as their subsequent stamp imprinting. Finally, it was shown that stamp geometries with a width of 1.7 µm could be realised using inkjet-printed photomasks in the master manufacturing process. This methodology opens up the potential of fast and simple master manufacturing for the development and manufacturing of optical elements.

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Lithography in a quantum world

Cited by 10 publications

References 56 publications

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Recent Advances in Positive Photoresists: Mechanisms and Fabrication

Mean Free Path of Electrons in Organic Photoresists for Extreme Ultraviolet Lithography in the Kinetic Energy Range 20–450 eV

Investigation of Inkjet-Printed Masks for Fast and Easy Photolithographic NIL Masters Manufacturing

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