Lithography using ultrathin resist films

Recently, new resist criteria for low energy electron beam projection lithography (LEEPL) such as bi-layer, chemically amplified and silicon containing resists have been requested. In order to investigate the lithographic characteristics of each system, three chemically amplified resist samples consisting of silsesquioxane base polymer were prepared. It was found using a 50kV direct writing electron beam tool that the resist characteristics at 50nm film thickness indicated unique results compared with that of the 100nm, 150nm and 200nm film thickness in the resist screening. The screened resists presented around 80nm resolution with 180nm pitch in LEEPL imaging. However, the coating defect was detailed as a challenge for imaging ultra thin film resists.

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“…Nearly all defects were characterized as pin-hole or bubble types, not crystal originated particles as reported in EUV lithography [26,27].…”

Section: 4supporting

confidence: 54%

Ultra Thin Film Resist for Low Energy E-beam Projection Lithography.

Nakamura

Ishikawa

Sato

et al. 2002

J. Photopol. Sci. Technol.

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“…Thin (<500 nm) and ultrathin films (<100 nm) of polymers , are used in numerous applications and processes, including alignment layers for liquid crystals in displays, photoresists for photolithography, , boundary layer lubricants in data storage applications, sensors, and antireflection coatings . Recently, layer-by-layer deposited polyelectrolyte thin films have been utilized to fabricate versatile functional micro- and nanocapsules, which possess considerable potential for applications in many fields, including drug delivery …”

Section: Introductionmentioning

confidence: 99%

Ultrathin Films of Poly(ethylene oxides) on Oxidized Silicon. 1. Spectroscopic Characterization of Film Structure and Crystallization Kinetics

2003

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We have characterized the structure, molecular orientation, and crystallization kinetics of isothermally crystallized thin (film thickness d < 500 nm) and ultrathin films (d < 100 nm) of poly(ethylene oxides) on oxidized silicon substrates by a combination of microscopic and spectroscopic methods. In situ hot stage atomic force microscopy (AFM) reveals a preferred flat-on orientation of lamellar crystals in films thinner than ca. 300 nm. The mean orientation of the polymer molecules, as measured by transmission and grazing angle reflection FT-IR spectroscopy, fully agrees with the preferred orientation of the PEO helices parallel to the surface-normal direction, as inferred from the AFM data. In addition to a strong film thickness dependence of this preferred chain orientation, the FT-IR data indicate that the degree of crystallinity decreases steadily when the film thickness becomes smaller than ∼200 nm. The local environment of pyrene end-labels in derivatized PEO was characterized by steady-state fluorescence spectroscopy, and the excimer/monomer emission ratio was found to be very sensitive to both film thickness and crystallization temperature. The latter relationship could be described by an Arrhenius equation and yielded an excimer-forming-site energy of 17 ± 2 kJ/mol. Finally, the isothermal crystallization of PEO in ultrathin films was followed spectroscopically in situ. Both fluorescence and FT-IR spectroscopy indicated that the crystallization kinetics are progressively slowed down for decreasing film thickness, presumably due to the increased glass transition temperature of ultrathin PEO films on interactive substrates.

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“…Recently, there has been increasing interest in the effect of restricted geometry on the properties of polymer systems such as thin polymer films. As thin and ultrathin polymer films are widely used in technological applications, including liquid‐crystal displays,1 microelectronics fabrication,2 photoresists for photolithography,2, 3 and lubricants in magnetic information storage devices,4 understanding the role of confinement and interface in altering the physical behavior of polymers is of great importance. With various experimental techniques, properties such as the glass‐transition temperature ( T g ),5–10 crystallization behavior,11–13 morphology,14, 15 and electrical properties16 of thin polymer films have been investigated.…”

Section: Introductionmentioning

confidence: 99%

Reflection–absorption infrared spectroscopy investigation of the crystallization kinetics of poly(ethylene terephthalate) ultrathin films

Zhang

Duan

et al. 2004

J Polym Sci B Polym Phys

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Reflection-absorption infrared spectroscopy was used to study the crystallization behavior of poly(ethylene terephthalate) (PET) ultrathin films. The crystallinity of ultrathin films was estimated by the fraction of trans conformers of PET. The isothermal and nonisothermal crystallization kinetics of ultrathin films with different thicknesses were investigated. The thinner PET film showed slower kinetics during isothermal crystallization than the thicker film. Moreover, the final crystallinity of films with various thicknesses were reduced with decreasing thickness. An Avrami equation was used to fit the acquired results. The Avrami exponents decreased with the film thickness. As for the nonisothermal crystallization, the cold-crystallization starting temperature shifted to a lower temperature as the film thickness increased. The influence of the substrate on the crystallization kinetics of the films was also studied. The half-crystallization times and final crystallinities of ultrathin films adsorbed onto a self-assembled-monolayer-treated surface and an untreated substrate were clearly different, although their thickness dependence was similar.

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Lithography using ultrathin resist films

Abstract: Articles you may be interested inExploring the ultimate resolution of positive-tone chemically amplified resists: 26 nm dense lines using extreme ultraviolet interference lithography

Cited by 10 publications

References 7 publications

Ultra Thin Film Resist for Low Energy E-beam Projection Lithography.

Ultra Thin Film Resist for Low Energy E-beam Projection Lithography.

Ultrathin Films of Poly(ethylene oxides) on Oxidized Silicon. 1. Spectroscopic Characterization of Film Structure and Crystallization Kinetics

Reflection–absorption infrared spectroscopy investigation of the crystallization kinetics of poly(ethylene terephthalate) ultrathin films

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