Live X-Ray Topography and Crystal Growth of Silicon

Chikawa, Jun–ichi

doi:10.1143/jjap.38.4619

Cited by 5 publications

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“…13) This type of technique was referred to as "live X-ray topography" 1) and has been used for in-situ observations of defects, crystal growth, and phase transformation.…”

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confidence: 99%

“…Such non-equilibrium states can be observed with the live X-ray topography that the present author developed. 1) Although a superheated state is imagined to have a crystal lattice with a lot of line imperfections (dislocations) as an intermediate state between crystal and melt, it was found to be a dislocation-free "ideally perfect" state; perfect crystals can be highly superheated, and superheat makes the crystal perfect. Such unanticipated behavior of superheat is important for growing perfect crystals; silicon crystals are grown from the melt near the melting point, and temperature fluctuation due to melt convection causes remelting which is accompanied with superheat of the interface region.…”

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Superheat of silicon crystals observed by live X-ray topography

Chikawa

2004

Proceedings of the Japan Academy. Ser. B: Physical and Biologic

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Abstract:In-situ observations of Si crystal growth and melting have been carried out by live X-ray diffraction topography. Superheated solid states beyond the melting point was observed for dislocation-free crystals with melting in their inside. Dislocations were found to impede superheat and to melt the crystal without an appreciable superheating. A slightly superheated state accompanying melting removes all dislocations including immobile ones by their climb motion. It is proposed that self-interstitials needed for the volume change by melting are supplied by climb of dislocations, in contrast to dislocation-free crystals creating the interstitials thermally. In real crystal growth, remelting occurs naturally by melt convection and acts to make the growing crystal dislocation-free.

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“…13) This type of technique was referred to as "live X-ray topography" 1) and has been used for in-situ observations of defects, crystal growth, and phase transformation.…”

Section: )mentioning

confidence: 99%

mentioning

confidence: 99%

Superheat of silicon crystals observed by live X-ray topography

Chikawa

2004

Proceedings of the Japan Academy. Ser. B: Physical and Biologic

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Dynamic observation of dislocation evolution and interaction with twin boundaries in silicon crystal growth using in – situ synchrotron X-ray diffraction imaging

et al. 2021

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The grown-in dislocation dynamics and interaction mechanisms with growth twins are investigated in-situ during the directional solidification of silicon crystal. The melting, solidification and cooling down process is performed in a dedicated installation at the European synchrotron radiation facility and is fol-lowed by X-ray Bragg diffraction imaging techniques (X-ray topography) at the mesoscale in real-time. Existing dislocations in the seed are observed to propagate in the up-grown crystal via replicas. They ex-pand vertically with the moving solid-liquid interface being always aligned perpendicular to the growth front. During the solidification process when they meet a growth twin lamella ( 3{111}), they neither pile-up nor transmit through the boundary. They are blocked by the twin, but they continue to move laterally behind the growth front due to the thermomechanical stresses in the system. The existence of dis-locations at the solidliquid interface, their evolution and interaction with twin boundaries is discussed, as growth proceeds, based on a detailed crystallographic analysis of the system.

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