Load effects on the phase transformation of single-crystal silicon during nanoindentation tests

Yan, Jiwang; Takahashi, Hirokazu; Gai, Xiaohui; Harada, Hirofumi; Tamaki, Jun’ichi; Kuriyagawa, Tsunemoto

doi:10.1016/j.msea.2005.09.120

Cited by 82 publications

(80 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…On unloading, depending on the indentation load and unloading rate, either amorphous silicon (a-Si) or a mixture of the high-pressure crystalline Si-III and Si-XII phases form, causing either an elbow or a pop-out, respectively, in the unloading curves. These metastable phases have been observed in nanoindented silicon by Raman spectroscopy, 2,[8][9][10][11] plan view, 7 and cross-sectional transmission electron microscopy (XTEM) [1][2][3][4][5][12][13][14][15] as well as electrical measurements. 16,17 In addition, XTEM studies, following indentation on (100) silicon, also show slip bands on {111} planes below the transformation zone.…”

Section: Introductionmentioning

confidence: 99%

Phase transformations in (111) Si after spherical indentation

Haq

Munroe

2009

J. Mater. Res.

View full text Add to dashboard Cite

Phase transformations in (111) Si after spherical indentation have been investigated by cross-sectional transmission electron microscopy. Even at an indentation load of 20 mN, a phase transformation zone including the high-pressure crystalline Si phases was observed within the residual imprints. The volume of the transformation zone, as well as that of the crystalline phases increased with the indentation load. Below the transformation zone, slip was found to occur on {311} planes rather than on {111} planes, usually observed on indentation of (100) Si. The distribution of defects was asymmetric, and for indentation loads up to 80 mN, their density was significantly lower than that reported for (100) Si. The experimental observations correlated well with modeling of the applied stress through ELASTICA.

show abstract

Section: Introductionmentioning

confidence: 99%

Phase transformations in (111) Si after spherical indentation

Haq

Munroe

2009

J. Mater. Res.

View full text Add to dashboard Cite

show abstract

“…18,19) Zarudi et al 20) indicated that the microstructure of the transformation zone of indented silicon is characterised by amorphous phase at a maximum indentation load of 30 mN. Yan et al 21) also reported that for single crystal silicon, the critical load for phase transformation and the occurrence of pop-out events is around 30 mN. It is observed in Fig.…”

Section: Resultsmentioning

confidence: 93%

Load Effects on Nanoindentation Behaviour and Microstructural Evolution of Single-Crystal Silicon

et al. 2010

View full text Add to dashboard Cite

Nanoindentation tests are performed on single-crystal silicon wafers using a Berkovich indenter and maximum indentation loads of 30 mN, 40 mN, and 70 mN. The microstructural evolutions of the indented specimens are examined using transmission electron microscopy and selected area diffraction techniques. The results show that the unloading curve of the specimen indented to a maximum load of 30 mN has a smooth profile, whereas those of the specimens indented to 40 mN or 70 mN have a pop-out feature. The hardness and Young's modulus of the silicon specimens reduce with an increasing indentation load, and have values of 15.8 GPa and 182 GPa, respectively, under the highest indentation load of 70 mN. In addition, a strong correlation is observed between the indentation load and the microstructural change in the indentation affected area of the silicon specimens. Specifically, a completely amorphous phase is induced within the indentation zone in the specimen indented to a maximum load of 30 mN, whereas a mixed structure comprising amorphous phase and nanocrystalline phase is found in the indentation zones in the specimens loaded to 40 mN and 70 mN. The microstructural observations imply that the load-dependent nature of the unloading curves is related to the occurrence of different phase transformation mechanisms under different indentation loads.

show abstract

“…Subsequently, at deeper depth of indentations the AlN sample hardness coalesces to the hardness of the sapphire substrate. 21,27 At deep depth of indentation as we approach the sapphire substrate, the sapphire substrate dominates the properties of the composites since sapphire is much harder than the AlN films. For the heat-treated sample with an implantation fluence of 0.5 × 10 17 cm −2 the hardness increases to a maximum value with an increase in the temperature up to a temperature of 300 • C. However, beyond that with a further increase in the temperature above 350 • C, the hardness begins to drop and reaches the hardness of the sapphire substrate at the hardness continue to increase with increasing thermal annealing temperature for the 1.0 × 10 17 implantation fluence.…”

Section: Resultsmentioning

confidence: 99%

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Mamun

Tapily

Moutanabbir

et al. 2018

ECS J. Solid State Sci. Technol.

View full text Add to dashboard Cite

The ability to transfer bulk quality III-N thin layers onto foreign platforms is a powerful strategy to enable high-efficiency and low-cost optoelectronic devices. Ion-cut using sub-surface defect engineering has been an effective process to split and transfer a variety of semiconductors. With this perspective, hydrogen-implanted AlN samples were annealed in air at temperatures ranging from 300 • C to 600 • C for 5 min to study the influence of pre-layer splitting treatments on the nanomechanical properties. There is a clear dependence of the hardness on implanted hydrogen implantation fluence. We observe that the as-implanted hardness increased from 18 GPa for the virgin reference sample to ∼25 GPa for the highest fluence of 3 × 10 17 H cm −2 prior to annealing. In the case of reference single crystalline Si samples, a significant drop in the hardness and elastic modulus is observed in the H implantation-induced damage zone subsequent to thermal annealing , while for crystalline epitaxial AlN samples with 0.5 × 10 17 and 2.0 × 10 17 H implant fluences, the hardness increases and peaks until the thermal annealing temperature reaches 350 • C and subsequently begins to drop thereafter for higher annealing temperatures. However, for the 1.0 × 10 17 H implantation fluence the hardness continues to increase with increasing thermal annealing temperature. The remarkable growth in the optoelectronic industry is attributed to group III-nitride compound semiconductors such as GaN, AlN, and InN. [1][2][3][4][5][6] Due to the wide bandgap nature and the piezoelectric properties of AlN and GaN 7,8 and the high electron mobility and small bandgap of InN, 9 significant interest in the fabrication of these materials is palpable.The exploitation of the full potential of the group III-nitride compound semiconductors in the emerging optoelectronic technologies such as deep ultraviolet DUV light emitting diodes LEDs, surface acoustic wave sensors (SAWs), RF filters in MEMS technologies etc., faces major challenges namely the lack of or the high cost of high crystalline quality material. Although bulk group III-nitride wafers are excessively expensive, only 2-4 inch bulk GaN wafers are commercially available. In general, due to its high thermal stability, single crystal sapphire substrates are used for the epitaxial growth of group III-nitride layers. Due to lattice and thermal mismatch between the III-N semiconductor materials and growth on substrates such as sapphire, it is documented that the grown layers tend to be defective with misfit dislocations. Reducing interfacial defect density requires the growth of very thick layers which is a very lengthy process. Bulk wafers are obtained from these thick layers. In order to reduce the cost of these bulk materials one approach would be to implement the ion-cut process. [10][11][12] The ion-cut process, which is based on ion (H and/or He) implantation and wafer bonding, is used to transfer crystalline layers onto substrates that produce heterostructures that cannot be produced by other...

show abstract

Load effects on the phase transformation of single-crystal silicon during nanoindentation tests

Cited by 82 publications

References 15 publications

Phase transformations in (111) Si after spherical indentation

Phase transformations in (111) Si after spherical indentation

Load Effects on Nanoindentation Behaviour and Microstructural Evolution of Single-Crystal Silicon

Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting

Contact Info

Product

Resources

About