2019
DOI: 10.1016/j.jallcom.2019.04.303
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Local atomic configurations, energy structure, and optical properties of implantation defects in Gd-doped silica glass: An XPS, PL, and DFT study

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Cited by 13 publications
(9 citation statements)
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“…The peak corresponding to the Si 2p orbital always has the expected position at 103.4 eV, which corresponds the expected position for SiO 2 [38,39]. The binding energies (BE) of the Ta 4f 7/2 orbital falls around 26.9 eV for 4Ta IMP Si-2Ag, very close to the position found for pure Ta 2 O 5 [40,41].…”
Section: Sample S Betsupporting
confidence: 70%
“…The peak corresponding to the Si 2p orbital always has the expected position at 103.4 eV, which corresponds the expected position for SiO 2 [38,39]. The binding energies (BE) of the Ta 4f 7/2 orbital falls around 26.9 eV for 4Ta IMP Si-2Ag, very close to the position found for pure Ta 2 O 5 [40,41].…”
Section: Sample S Betsupporting
confidence: 70%
“…Congruently with the theoretical model, XPS spectra did not evidence any modification of Ga‐3d and Se‐3d core levels after dosing 10 10 L (1 L=10 −6 Torr⋅s) of O 2 and H 2 O at room temperature on GaSe (Figure 4a–b) [56,70–74] . To further verify the role of Se vacancies, the surface of GaSe were modified by ion bombardment, so as to introduce a density of Se vacancies of ∼10 16 cm −2 , estimated by quantitative XPS [75,76] . After ion bombardment, two new components in Ga‐3d (Figure 4c) were observed, assigned to Ga(0), [56] and Ga 2 Se 3 species , [72] respectively.…”
Section: Resultssupporting
confidence: 61%
“…[56,[70][71][72][73][74] To further verify the role of Se vacancies, the surface of GaSe were modified by ion bombardment, so as to introduce a density of Se vacancies of ~10 16 cm À 2 , estimated by quantitative XPS. [75,76] After ion bombardment, two new components in Ga-3d (Figure 4c) were observed, assigned to Ga(0), [56] and Ga 2 Se 3 species , [72] respectively. Correspondingly, in the Se-3d (Figure 4d) a new component corresponding to both Se(0) and Ga 2 Se 3 species [77] emerges.…”
Section: Experimental Validation Of the Theoretical Modelmentioning
confidence: 99%
“…Energies of the chemical processes were discussed as the differences between total energies of products and reactants. Our recent work demonstrated the feasibility of this model for the description of defects in quartz . For SnO 2 , SnI 2 , SnI 4 , we calculated the electronic structure and total energies for the structures corresponding with ground states.…”
Section: Experimental and Calculation Detailsmentioning
confidence: 99%