Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy

Lu, Ying-Gang; Turner, Stuart; Verbeeck, Johan; Janssens, Stoffel D.; Haenen, Ken; Tendeloo, Gustaaf Van

doi:10.1063/1.4813842

Cited by 20 publications

(14 citation statements)

References 24 publications

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“…The presence of Boron and other dopants in ND cores of some of the nanodiamonds is inferred from the longer C-C bond spacing seen in NDs 38 , where the bond length increased by about 5 pm. This can also indicate other dopants (N being most likely candidate).…”

Section: Introductionmentioning

confidence: 99%

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds

Afandi

Howkins

Boyd

et al. 2018

Sci Rep

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The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~1017 B cm−3), is found alongside the observation that some particles are heavily doped (~1020 B cm−3) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.

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Section: Introductionmentioning

confidence: 99%

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds

Afandi

Howkins

Boyd

et al. 2018

Sci Rep

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“…As granular BDD consists of both sp 2 -and sp 3 -hybridized networks, it can be regarded an ideal system to manifest the above mentioned changes under high pressure. Most of the work after the discovery of superconductivity in BDD is based on the more relevant sp 3 networks in the grains and therefore, the present state of knowledge on how boron atoms are accommodated in the sp 2 matrix is vague [7,[18][19][20][21][22][23]. Finding a phase change in the heavily doped sp 2 and sp 3 hybridized network at high pressures would solve a longstanding mystery.…”

Section: Introductionmentioning

confidence: 99%

High-pressure behavior of superconducting boron-doped diamond

et al. 2017

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This work investigates the high-pressure structure of freestanding superconducting ($T_{c}$ = 4.3\,K) boron doped diamond (BDD) and how it affects the electronic and vibrational properties using Raman spectroscopy and x-ray diffraction in the 0-30\,GPa range. High-pressure Raman scattering experiments revealed an abrupt change in the linear pressure coefficients and the grain boundary components undergo an irreversible phase change at 14\,GPa. We show that the blue shift in the pressure-dependent vibrational modes correlates with the negative pressure coefficient of $T_{c}$ in BDD. The analysis of x-ray diffraction data determines the equation of state of the BDD film, revealing a high bulk modulus of $B_{0}$=510$\pm$28\,GPa. The comparative analysis of high-pressure data clarified that the sp$^{2}$ carbons in the grain boundaries transform into hexagonal diamond.Comment: 7 pages, 4 figure

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“…On the other hand, it can be expected that the carbon atoms close to the dislocations show a larger π* contribution due to the pres-ence of distorted and/or dangling bonds at defects. 13,14 The boron edge at 190 eV shows the presence of three distinct subpeaks. These sub-peaks A, B and C are typical signatures for tetrahedrally embedded boron in diamond, and will be discussed further below.…”

Section: Resultsmentioning

confidence: 99%

Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films

et al. 2016

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A thin film of heavily B-doped diamond has been grown epitaxially by microwave plasma chemical vapor deposition on an undoped diamond layer, on top of a Ir/YSZ/Si(001) substrate stack, to study the boron segregation and boron environment at the dislocations present in the film. The density and nature of the dislocations were investigated by conventional and weak-beam dark-field transmission electron microscopy techniques, revealing the presence of two types of dislocations: edge and mixed-type 45° dislocations. The presence and distribution of B in the sample was studied using annular dark-field scanning transmission electron microscopy and spatially resolved electron energy-loss spectroscopy. Using these techniques, a segregation of B at the dislocations in the film is evidenced, which is shown to be intermittent along the dislocation. A single edge-type dislocation was selected to study the distribution of the boron surrounding the dislocation core. By imaging this defect at atomic resolution, the boron is revealed to segregate towards the tensile strain field surrounding the edge-type dislocations. An investigation of the fine structure of the B-K edge at the dislocation core shows that the boron is partially substitutionally incorporated into the diamond lattice and partially present in a lower coordination (sp(2)-like hybridization).

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Local bond length variations in boron-doped nanocrystalline diamond measured by spatially resolved electron energy-loss spectroscopy

Cited by 20 publications

References 24 publications

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds

Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds

High-pressure behavior of superconducting boron-doped diamond

Direct imaging of boron segregation at dislocations in B:diamond heteroepitaxial films

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