Local bonding in PECVD-SiOxNy films

Criado, D.; Alayo, Marco I.; Fantini, M.C.A.; Pereyra, I.

doi:10.1016/j.jnoncrysol.2005.11.112

Cited by 8 publications

(5 citation statements)

References 16 publications

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“…On the other hand, films with high N content, i.e. Si 3 N 4 -like, presented a second structure in the absorption edge, one at lower energies related to Si 3 N 4 and another at higher values close to that of SiO 2 [11,13]. This hypothesis is compatible with other author's results [14] which describe a silicon oxynitride sample having an intermediate stoichiometry by a combination of the RBM and RMM models.…”

Section: Discussionsupporting

confidence: 89%

Structural and morphological studies on SiOxNy thin films

Criado

Zúñiga

Pereyra

2008

Journal of Non-Crystalline Solids

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Section: Discussionsupporting

confidence: 89%

Structural and morphological studies on SiOxNy thin films

Criado

Zúñiga

Pereyra

2008

Journal of Non-Crystalline Solids

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“…The incidence angle θ of the x-rays relative to the substrate surface was changed from the glancing angle (θ = 15 • ) to near normal incidence (θ = 80 • ). The photon energy was calibrated using the Si 1s → σ * resonance peak for SiO 2 [19].…”

Section: Methodsmentioning

confidence: 99%

Effect of substrates on the molecular orientation of silicon phthalocyanine dichloride thin films

Deng¹,

Baba²,

Sekiguchi³

et al. 2007

J. Phys.: Condens. Matter

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Molecular orientations of silicon phthalocyanine dichloride (SiPcCl2) thin films deposited on three different substrates have been measured by near-edge x-ray absorption fine structure (NEXAFS) spectroscopy using linearly polarized synchrotron radiation. The substrates investigated were highly oriented pyrolitic graphite (HOPG), polycrystalline gold and indium tin oxide (ITO). For thin films of about five monolayers, the polarization dependences of the Si K-edge NEXAFS spectra showed that the molecular planes of SiPcCl2 on three substrates were nearly parallel to the surface. Quantitative analyses of the polarization dependences revealed that the tilted angle on HOPG was only 2°, which is interpreted by the perfect flatness of the HOPG surface. On the other hand, the tilted angle on ITO was 26°. Atomic force microscopy (AFM) observation of the ITO surface showed that the periodicity of the horizontal roughness is of the order of a few nanometres, which is larger than the molecular size of SiPcCl2. It is concluded that the morphology of the top surface layer of the substrate affects the molecular orientation of SiPcCl2 molecules not only for mono-layered adsorbates but also for multi-layered thin films.

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“…The Si K-edge resonance energies derived from Si-N and Si-O bonds have been measured for solid silicon compounds i.e., Si 3 N 4 and SiO 2 respectively. 16,17) It was observed that the energy of the Si 1s ! Ã resonance for Si 3 N 4 is 4 eV lower than that for SiO 2 .…”

Section: Resultsmentioning

confidence: 99%

Orientation of Thin Films Synthesized from Silicon Phthalocyanine Dichloride on a Highly Oriented Pyrolytic Graphite Investigated Using Near Edge X-ray Absorption Fine Structure

Deng

Sekiguchi

Baba

et al. 2007

jjap

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Molecular orientation of thin films of silicon phthalocyanine (SiPc) compounds on highly oriented pyrolytic graphite (HOPG) was investigated by near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy (XPS). The films were prepared by a casting method using solution of SiPc dichloride. XPS results showed that the chlorine atoms in SiPc dichloride were substituted by oxygen atoms when the film was heated in the air. The orientation of the molecules with respect to the substrate plane was investigated by the polarization dependences of the Si K edge NEXAFS spectra. For the sample heated in the air, two clear peaks appeared in the NEXAFS spectra at around 1847.2 and 1852.4 eV, which were assigned to Si 1s→σSi–N* and Si 1s→σSi–O*, respectively. The intensities of the resonance peaks showed strong polarization dependence. A quantitative analysis of the polarization dependence revealed that the Si–N bond was lying down while the Si–O bond was out of the plane.

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Local bonding in PECVD-SiOxNy films

Cited by 8 publications

References 16 publications

Structural and morphological studies on SiOxNy thin films

Structural and morphological studies on SiOxNy thin films

Effect of substrates on the molecular orientation of silicon phthalocyanine dichloride thin films

Orientation of Thin Films Synthesized from Silicon Phthalocyanine Dichloride on a Highly Oriented Pyrolytic Graphite Investigated Using Near Edge X-ray Absorption Fine Structure

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