Local characterization and engineering of proximitized correlated states in 
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 vertical heterostructures

Zhang, Zhiming; Watanabe, Kenji; Taniguchi, Takashi; LeRoy, Brian J.

doi:10.1103/physrevb.102.085429

Cited by 5 publications

(2 citation statements)

References 56 publications

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“…This is primarily due to screening in 3D metals and interface defect scattering. The use of 2D materials that were stacked in an inert atmosphere to avoid interface damage and contamination, together with sensitive local probes providing direct access to the charge distribution in graphene, has made it possible to overcome these hurdles 21,22 .…”

Section: Introductionmentioning

confidence: 99%

“…In this work, we present evidence of the emergence of a CDW in graphene produced by its proximity to the commensurate CDW (CCDW) in a TaS2 substrate. While there are several recent experiments which have studied vertical heterostructures of graphene and a TMD with STM [22][23][24] , it has proven difficult to experimentally isolate the electronic states in the graphene layer from those belonging to the TMD substrates making it difficult to definitively prove a proximity induced CDW in graphene. In this work, by using the coexisting CDW and Mott gap in TaS2, we can isolate the electronic states in the graphene layer and establish the presence of the proximity induced CDW.…”

Section: Introductionmentioning

confidence: 99%

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Proximity induced charge density wave in graphene/1T-TaS2

Andrei,

Tilak,

Altvater

et al. 2024

Preprint

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The proximity-effect, a phenomenon whereby materials in close contact appropriate each other’s electronic-properties, is widely used in nano-scale devices to induce electron-correlations at heterostructure interfaces. Commonly observed proximity-induced correlation-effects include superconductivity, magnetism, and spin-orbit interactions. Thus far, however, proximity induced charge density waves (CDW) have not been rigorously explored, primarily because of screening in 3D metals and defect scattering at interfaces. Here, we report the observation of a CDW proximity effect between graphene and the commensurate CDW in 1T-TaS2 (henceforth called TaS2 for brevity). Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical modeling to probe the interface between graphene and a TaS2 crystal, we demonstrate the existence of a proximity induced CDW within graphene. Furthermore, we observe that graphene modifies the band structure at the surface of TaS2, by providing mid-gap carriers and reducing the strength of electron correlations there. We show that the mechanism underlying the proximity induced CDW is well-described by short-range exchange interactions that are distinctly different from previously observed proximity effects.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Proximity induced charge density wave in graphene/1T-TaS2

Andrei,

Tilak,

Altvater

et al. 2024

Preprint

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Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure

Tilak,

Altvater,

Hung

et al. 2024

Nat Commun

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The proximity-effect, whereby materials in contact appropriate each other’s electronic-properties, is widely used to induce correlated states, such as superconductivity or magnetism, at heterostructure interfaces. Thus far however, demonstrating the existence of proximity-induced charge-density-waves (PI-CDW) proved challenging. This is due to competing effects, such as screening or co-tunneling into the parent material, that obscured its presence. Here we report the observation of a PI-CDW in a graphene layer contacted by a 1T-TaS 2 substrate. Using scanning tunneling microscopy (STM) and spectroscopy (STS) together with theoretical-modeling, we show that the coexistence of a CDW with a Mott–gap in 1T-TaS 2 coupled with the Dirac-dispersion of electrons in graphene, makes it possible to unambiguously demonstrate the PI-CDW by ruling out alternative interpretations. Furthermore, we find that the PI-CDW is accompanied by a reduction of the Mott gap in 1T-TaS 2 and show that the mechanism underlying the PI-CDW is well-described by short-range exchange-interactions that are distinctly different from previously observed proximity effects.

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Proximity effects, topological states, and correlated physics in graphene heterostructures

Zollner,

Fabian

2024

2D Mater.

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Graphene spintronics is an emerging field of research that exploresthe use of graphene’s extraordinary spin and charge transport properties tomanipulate and control the electron spin degree of freedom for potentialapplications in information processing and data storage. Particularly interestingare graphene-based van-der-Waals heterostructures, which allow the creation oftailored spintronic properties, emerging from proximity effects, without destroyingthe unique Dirac states. The possibility to induce customized spin-orbit andexchange coupling in graphene, via band structure engineering, can lead totopologically protected edge states for dissipationless electronics and spintronics.In flat-band graphene materials, in particular, magic-angle bilayer graphene andrhombohedral (ABC stacked) trilayer graphene, the coupling between spin andvalley (orbital) degrees of freedom can be coupled by strong Coulomb interactions,leading to a variety of fascinating correlated and superconducting phases. Theemerging isospin electronics, combining both the electron spin and valley flavors,can transform the landscape of low-temperature electronics and lead to novelfunctionalities based on quantum matter. This Perspective explores the latestadvancements in proximity effects, topological states, and correlated physics ingraphene-based van der Waals heterostructures, discussing the fundamentals forpotential applications.

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Local characterization and engineering of proximitized correlated states in graphene/NbSe2 vertical heterostructures

Cited by 5 publications

References 56 publications

Proximity induced charge density wave in graphene/1T-TaS2

Proximity induced charge density wave in graphene/1T-TaS2

Proximity induced charge density wave in a graphene/1T-TaS2 heterostructure

Proximity effects, topological states, and correlated physics in graphene heterostructures

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