“…In previous studies, strain was the conventional scheme to tune the lattice attribute, and it could induce obvious modifications on both the DMI and magnetic anisotropy of skyrmion-hosting films based on the magnetoelastic effect. − However, the application of strain on the films required a stretchable substrate (e.g., ferroelectrics, shape memory alloy, and flexible polymer), posing a great challenge concerning compatibility with modern large-scale integrated circuit technology (LSICT). An alternative strategy for lattice modification is to introduce lattice defects (e.g., vacancies and interstitials), which have been demonstrated to be able to significantly affect the Heisenberg exchange interaction, magnetic anisotropy, and DMI. − Thus, the skyrmion nucleation is expected to be controllably manipulated through appropriate defect engineering. More importantly, this strategy does not rely on any special substrate, showing better compatibility with modern integrated circuit technology.…”