2008
DOI: 10.1063/1.2993230
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Local control of spin polarization in a semiconductor by microscale current loops

Abstract: We demonstrate a method to electrically manipulate the spin polarization in a semiconductor on a micrometer length scale and a submicrosecond time scale. A variable magnetic field induced by a microscale current loop magnetizes the Mn2+ ions in a CdMnTe/CdMgTe diluted magnetic semiconductor quantum well, and via sp-d exchange interaction polarizes photogenerated electron-hole pairs. A maximum spin polarization degree of ±8.5% is obtained at 4.2 K without external magnetic field. The induced carrier spin polari… Show more

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Cited by 10 publications
(13 citation statements)
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“…1b) with an amplitude of 120 mA (corresponding to a magnetic field amplitude of about 10 mT [11]) is introduced and magnetizes the Mn 2þ ion spins, and thus, via sp-d exchange interaction, polarizes the spins of optically generated electron-hole pairs. In agreement with former results [8], a positive (negative) current pulse can generate a pronounced positive (negative) carrier spin polarization.…”
supporting
confidence: 87%
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“…1b) with an amplitude of 120 mA (corresponding to a magnetic field amplitude of about 10 mT [11]) is introduced and magnetizes the Mn 2þ ion spins, and thus, via sp-d exchange interaction, polarizes the spins of optically generated electron-hole pairs. In agreement with former results [8], a positive (negative) current pulse can generate a pronounced positive (negative) carrier spin polarization.…”
supporting
confidence: 87%
“…As the repetition time (35 ns) of the pulse sequence is much shorter than the typical phonon lifetime in the studied system [13], the Mn 2þ spin temperature can be regarded as constant within one period. This explains, why r saturates to a constant value of about AE2.5% instead of continuously decreasing due to thermal heating as observed in former experiments performed on a much longer time scale [8,11].…”
Section: Resultsmentioning
confidence: 69%
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