Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing

Kang, Min; Kim, Yung Jun; Koo, Hyo-Chol; Cho, Sung Ki; Kim, Jae Jeong

doi:10.1149/1.3236391

Cited by 5 publications

(1 citation statement)

References 25 publications

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“…Chemical mechanical polishing (CMP) technology, which is a primary planarization method to manufacture semiconductor chips, has gained extensive attention [1]. The evaluation of polishing is connected with polishing machine, pad and slurry [2][3][4]. In general, polishing machine is fixed after purchased.…”

Section: Introductionmentioning

confidence: 99%

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

Wang

Chen

2015

KEM

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At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many years, the new alkaline copper rough slurry has been developed by the teachers and students in the Hebei University of Technology. The slurry has advantages as disadvantages. The composition of cost-effective slurry is simple and the effect of chemical mechanical polishing is good. But its stability is poor. In order to improve the stability, the compositions of the slurry need to adjust.The new alkaline copper rough slurry composed by abrasive, surface, chelating agent, oxidizing agent and deionized water. Experiments investigate the influence rule of copper polishing rate by the concentration of abrasive, the content of surface, the content of oxidizing agent and the content of chelating agent. The conclusion is arrived. When the concentration of abrasive is 4%, the content of surfactant is 10ml/l, the content of chelating agent is 10ml/l and the content of oxidizing agent is 5ml/l, the copper polishing rate keep 5000 Å /min.

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Section: Introductionmentioning

confidence: 99%

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

Wang

Chen

2015

KEM

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Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor

et al. 2014

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This work investigates the static corrosion and removal rates of copper as functions of H 2 O 2 and FA/OIIconcentration, and uses DC electrochemical measurements such as open circuit potential (OCP), Tafel analysis, as well as cyclic voltammetry (CV) to study H 2 O 2 and FA/OIIdependent surface reactions of Cu coupon electrode in alkaline slurry without an inhibitor. An atomic force microscopy (AFM) technique is also used to measure the surface roughness and surface morphology of copper in static corrosion and polishing conditions. It is shown that 0.5 vol.% H 2 O 2 should be the primary choice to achieve high material removal rate. The electrochemical results reveal that the addition of FA/O II can dissolve partial oxide film to accelerate the electrochemical anodic reactions and make the oxide layer porous, so that the structurally weak oxide film can be easily removed by mechanical abrasion. The variation of surface roughness and morphology of copper under static conditions is consistent with and provides further support for the reaction mechanisms proposed in the context of DC electrochemical measurements. In addition, in the presence of H 2 O 2 , 3 vol.% FA/O II may be significantly effective from a surface roughness perspective to obtain a relatively flat copper surface in chemical mechanical planarization (CMP) process.

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Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

Jia¹,

Liu²,

Wang³

et al. 2015

J. Semicond.

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The article studied the electrochemical behavior of P2 alkaline polishing slurry. The main research is the changing discipline of Ecorr and Icorr in the Cu electrolyte at different concentrations of oxidant H2O2. It compares potentiodynamic polarization curves in different P2 slurries and analyzes the passivation function of H2O2 acting on controlling dishing. The result implies that the potential increases gradually and then levels off while the current density on the contrary decreases with the augment of H2O2 concentration. In addition, dishing declines with the increasing of H2O2 along with the optimization of planarization of the alkaline P2 slurry.

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Local Corrosion of the Oxide Passivation Layer during Cu Chemical Mechanical Polishing

Cited by 5 publications

References 25 publications

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

Evaluation of the Stability on the New Alkaline Copper Bulk Slurry

Electrochemical investigation of copper chemical mechanical planarization in alkaline slurry without an inhibitor

Influence of oxidant passivation on controlling dishing in alkaline chemical mechanical planarization

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