2011
DOI: 10.1016/j.mee.2011.04.022
|View full text |Cite
|
Sign up to set email alerts
|

Local doping of silicon by a point-contact microwave applicator

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1
1
1

Citation Types

0
3
0

Year Published

2013
2013
2023
2023

Publication Types

Select...
4
4

Relationship

0
8

Authors

Journals

citations
Cited by 16 publications
(3 citation statements)
references
References 38 publications
0
3
0
Order By: Relevance
“…Amorphous silicon extracted from the regolith silicates for photovoltaic power generation is limited to ~1-5% efficiencies unless dopants are used to create pn junction cells. Although it is possible using microwave methods to create p-type silicon using Al dopant 64 , it is unlikely to be consistently repeatable and requires the extraction of Al which is not in the current inventory. For ISRU, we require dominantly thermal energy for heating, sintering ceramics, casting basalt, smelting minerals, etc using solar concentrators.…”
Section: Chemical Processing Of Raw Materialsmentioning
confidence: 99%
“…Amorphous silicon extracted from the regolith silicates for photovoltaic power generation is limited to ~1-5% efficiencies unless dopants are used to create pn junction cells. Although it is possible using microwave methods to create p-type silicon using Al dopant 64 , it is unlikely to be consistently repeatable and requires the extraction of Al which is not in the current inventory. For ISRU, we require dominantly thermal energy for heating, sintering ceramics, casting basalt, smelting minerals, etc using solar concentrators.…”
Section: Chemical Processing Of Raw Materialsmentioning
confidence: 99%
“…al. [48,49] have introduced a new method of local doping using microwave heating called pointcontact microwave technique. A point contact microwave applicator is shown in the Fig.…”
Section: P-n Junction Formationmentioning
confidence: 99%
“…The tip is in contact with the silicon wafer which causes local heating allowing dopant material to diffuse into the wafer within the hotspot. Experiments with Al tips on a 100–350 W microwave applicator at 2.45 GHz over 1 min doped regions of ∼1 mm diameter by ∼0.3 μm depth with concentrations of 10 19 −10 22 /cm 3 of dopant generating a pn junction barrier of 0.5–0.7 V. 22 This is a very promising approach to creating both pn junctions and lasing media but its accuracy and controllability are not established. Furthermore, P will require extraction from KREEP minerals with the imposition of complex chemical processing.…”
Section: Introductionmentioning
confidence: 99%