2018
DOI: 10.1016/j.ijepes.2017.11.033
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Local measurement based ultra-fast directional ROCOV scheme for protecting Bi-pole HVDC grids with a metallic return conductor

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Cited by 34 publications
(23 citation statements)
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“…Based on this, the voltage signatures are influenced due to the inductive termination of the lines. This important property can assist the discrimination of DC faults and has led to significant research, through which frequency-based nonunit protection schemes for selective HVDC protection have been developed [23]- [27]. These schemes make use of the inductive termination at both ends of a line to define protection zones and divide the system into clear zones.…”
Section: Summary Of Detection Methods and Discussionmentioning
confidence: 99%
“…Based on this, the voltage signatures are influenced due to the inductive termination of the lines. This important property can assist the discrimination of DC faults and has led to significant research, through which frequency-based nonunit protection schemes for selective HVDC protection have been developed [23]- [27]. These schemes make use of the inductive termination at both ends of a line to define protection zones and divide the system into clear zones.…”
Section: Summary Of Detection Methods and Discussionmentioning
confidence: 99%
“…The limiting inductors placed at both ends of the links delimit the borders of the protection zones, allowing selectivity. A faster protection system is presented in [26] where the ratio between the ROCOV at both sides of the reactor is used as a fault marker; it presents a detection time of 200 microseconds.…”
Section: Rate Of Change Of Voltagementioning
confidence: 99%
“…The frequency response of the voltage transfer functions is used to identify the decomposition level (and its corresponding frequency band), in which the impact of a highly-resistive internal fault is more distinctive than that of the external fault. To quantify this impact, the areas underneath the U r /U f transfer function are calculated at each level j, for a 500 Ω resistive fault at F int and for a solid fault at F ext , as shown in (9). The areas are denoted as λ j int and λ j ext , respectively.…”
Section: A Selection Of Decomposition Levelmentioning
confidence: 99%