Local phase transition at crack edges of Mo1−W Te2 polymorphs

Lee, Ha Heun; Lim, Eunji; Kang, Seohui; Eshete, Yonas Assefa; Won, Dongyeun; Lee, Young Hee; Jeong, Juyeong; Yang, Heejun; Chiang, Ching‐Yu; Cho, Suyeon

doi:10.1016/j.apsusc.2022.153503

Applied Surface Science

2022

DOI: 10.1016/j.apsusc.2022.153503

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Local phase transition at crack edges of Mo1−W Te2 polymorphs

Ha Heun Lee

Eunji Lim

Seohui Kang

et al.

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Cited by 3 publications

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“…TMD-based 2D metal–semiconductor heterostructures exhibit ohmic contact behavior with low contact resistance, which is an effective approach for high-performance 2D electronics. , Therefore, the phase-controlled synthesis of large-scale 2D metal–semiconductor heterostructures based on TMDs shows promising applications. The existing phase-engineering methods usually suffer from poor spatial controllability, small-scale production, and poor material compatibility. − ,− In addition, most of the 2D metal–semiconductor structures suitable for large-area integration use a two-step chemical vapor deposition (CVD) growth process, − which puts forward high requirements for the secondary growth compatibility of the materials. It is in tight demand to devise a spatially controlled and scalable one-step phase-engineering growth method for directly synthesizing metal–semiconductor heterostructure arrays of TMDs.…”

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confidence: 99%

One-Step Synthesis of Two-Dimensional Metal–Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

Zeng,

Wu,

et al. 2023

ACS Materials Lett.

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Molybdenum ditelluride (MoTe2) exhibits a variety of crystal phases, which can be phase-controlled by various external means, showing broad prospects in modern integrated circuits. The structure in which the semimetal 1T′ (or Td) phase electrode contacts the semiconductor 2H phase channel is considered an elegant solution for high-performance two-dimensional (2D) circuits because it achieves low contact resistance. However, most of the 2D metal–semiconductor structures for large-area integration use a two-step growth process, which puts forward high requirements for the secondary growth compatibility of the material. Here, we develop a method for the stable synthesis of the metallic Mo x W1–x Te2 (0 < x < 1) by W-triggered spatial phase engineering, and we further obtain a large-area Mo x W1–x Te2/2H-MoTe2 in-plane metal–semiconductor structure by one-step tellurization of a MoW/Mo periodic structure. Due to the unique 2D in-plane epitaxial mechanism of the phase transition from 1T′ to 2H, the highly crystalline semiconductor 2H-MoTe2 squeezes between two metallic Mo x W1–x Te2 electrodes and forms a seamless coplanar contacted channel; thus, the fabricated field-effect transistors exhibit good electrical characteristics. In addition, large-area 2D metal–semiconductor heterostructure arrays can be transferred onto flexible substrates, showing promising applications in flexible electronics. Herein, one-step synthesis of large-area 2D in-plane metal–semiconductor arrays opens up new possibilities for future integrated high-performance logic circuits.

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mentioning

confidence: 99%

One-Step Synthesis of Two-Dimensional Metal–Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

Zeng,

Wu,

et al. 2023

ACS Materials Lett.

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Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

Kim,

Sung,

Lee

2023

Small Science

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Since the successful isolation of single‐layer graphene with an atomic thickness, various van der Waals (vdW) materials have been intensively studied owing to their unique properties. Among the families of vdW materials, transition metal dichalcogenides (TMDs) have served as representatives because of their diverse band structures and intriguing quantum states, unlike those observed in their bulk counterparts. Particularly, unconventional polymorphic phases of TMDs increase the degrees of freedom in device fabrication and property modulation. As variations in structural phases significantly change the electrical, physical, and chemical properties of materials, phase engineering is essential for the new paradigm of TMD‐based devices. In this review, diverse strategies that can induce and control structural phases in TMDs are explored. After introducing the polymorphic phase changes and the resulting electronic band structures, the various empirical approaches used for manipulating phases in vdW materials, including phase‐selective synthesis and post‐synthesis treatments, are summarized. The group‐VI TMDs are considered as reference, and the analysis is extended to other TMDs across various groups in the periodic table. In addition to providing a comprehensive survey of the recent progress in TMD applications, the challenges for TMD applications and potential opportunities in emerging fields are discussed.

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Efficient hydrogen evolution reaction at the phase transition boundary of polymorphic Mo1−xWxTe2

et al. 2022

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Phase engineering of two-dimensional transition-metal dichalcogenides (TMDs) has been the subject of considerable interest as it represents a promising strategy for a highly active hydrogen evolution reaction (HER). However, various types of active sites on the basal planes and edges of TMDs have shown complicated mechanisms of the HER in TMDs, hindering the systematic engineering of the catalytic activity of TMDs. Here, we report the intrinsic basal-plane activity of a series of TMDs, Mo1−xWxTe2, whose phases can be engineered from semiconducting to metallic states by adjusting the stoichiometric ratio of tungsten atoms (x). Three forms of 2H- (semiconducting) and 1T′-(metallic) Mo1−xWxTe2, bulk, powder, and exfoliated flakes, as well as microreactors, were used to investigate the HER process of the phase-engineered TMDs. The catalytic activity of Mo1−xWxTe2 exhibits the best performance at the phase-transition boundary (i.e., x = 0.09) with a hydrogen conversion rate of 0.692 s−1, which is 10–20 times higher than that of other 2H and 1T′ samples with different x values. Our study provides a novel approach, using the phase-transition boundary, to modify the catalytic activity of polymorphic nanomaterials.

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Local phase transition at crack edges of Mo1−W Te2 polymorphs

Cited by 3 publications

References 28 publications

One-Step Synthesis of Two-Dimensional Metal–Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

One-Step Synthesis of Two-Dimensional Metal–Semiconductor Circuitry Based on W-Triggered Spatial Phase Engineering

Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides

Efficient hydrogen evolution reaction at the phase transition boundary of polymorphic Mo1−xWxTe2

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