Local SiO2 formation in silicon bombarded with oxygen above the critical angle for beam-induced oxidation: new evidence from sputtering yield ratios and correlation with data obtained by other techniques

Wittmaack, K.

doi:10.1002/1096-9918(200010)29:10<721::aid-sia916>3.0.co;2-q

Cited by 24 publications

(14 citation statements)

References 29 publications

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“…The dips in the intensity of the 30 Si C and 44 SiO C profiles correspond to the positions of the Ge delta-layers. Figure 2 shows the 30 Si C profiles at the near-surface region for E p ¾ 250 eV, E p ¾ 500 eV and E p ¾ 1 keV, respectively, at different primary ion incident angles. The apparent depth was calculated based on the assumption of a constant erosion rate from the surface to the first delta-layer.…”

Section: Surface Transientmentioning

confidence: 93%

“…After the initial dip in intensity, further oxygen incorporation will gradually enhance the ionization yield before reaching equilibrium when the fully altered layer is formed. 18,19 For E p ¾ 1 keV the 30 Si C profiles at Â < 40°show equilibrium signals at higher intensities than the initial intensities, but at about Â > 50°the signal intensities at equilibrium are lower than the initial intensities ( Fig. 2(c)).…”

Section: Surface Transientmentioning

confidence: 95%

“…15 The Ge delta-layers serve as depth markers. Figure 1 shows the depth profiles of 44 SiO C , 30 Si C and 70 Ge C using E p ¾ 250 eV at Â ¾ 20°. The Ge delta-layer peaks are used as depth markers.…”

Section: Methodsmentioning

confidence: 99%

“…The Ge delta-layer peaks are used as depth markers. The 30 Si C and 44 SiO C profiles were used in the determination of the surface transient width.…”

Section: Methodsmentioning

confidence: 99%

“…The oxidation of silicon also reduces the sputtering yield. 16,29 As the incident angle increases, the effective range of implanted oxygen decreases 23 and the sputter yield increases, 30 resulting in higher sputter rates. At Â > 60°there is little or no effect of implanted oxygen on sputtering yield.…”

Section: Sputter Ratesmentioning

confidence: 99%

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Surface transient effects in ultralow‐energy O₂⁺ sputtering of silicon

Chanbasha

Wee

2005

Surface & Interface Analysis

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It is known that by lowering the impact energy the sputter rate and surface transient width in SIMS will be reduced. However, few studies have been done at ultralow energies over a wide range of impact angles. This study examines the dependence of sputter rate and transient width as a function of O 2 + primary ion energy (E p = 250 eV, 500 eV and 1 keV) and incidence angles of 0-70• . The instrument used is the Atomika 4500 SIMS depth profiler and the sample was Si with 10 delta-layers of Si 0.7 Ge 0.3 . We observed that the lowest transient width of 0.7 nm is obtainable at normal and near-normal incidence with E p ∼ 250 eV and E p ∼ 500 eV. There is no significant improvement in transient width going down in energy from E p ∼ 500 to ∼250 eV. The onset of roughening is also not obvious at E p ∼ 250 eV over the whole angular range studied. Although the sputter rate during the surface transient is normally different from that at steady state, only at E p ∼ 250 eV was it observed that the sputter rate remained fairly independent of depth. We conclude that the best working ranges to achieve a narrow transient width and accurate depth calibration are at E p ∼ 250 eV/0 • < q < 20• and 500 eV/0 • < q < 10• .

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Section: Surface Transientmentioning

confidence: 93%

Section: Surface Transientmentioning

confidence: 95%

Section: Methodsmentioning

confidence: 99%

“…The Ge delta-layer peaks are used as depth markers. The 30 Si C and 44 SiO C profiles were used in the determination of the surface transient width.…”

Section: Methodsmentioning

confidence: 99%

Section: Sputter Ratesmentioning

confidence: 99%

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