2020
DOI: 10.1103/physrevmaterials.4.064006
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Local strain-dependent electronic structure and perpendicular magnetic anisotropy of a MnGaN 2D magnetic monolayer

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Cited by 4 publications
(4 citation statements)
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“…Thus, the resulting Stoner criterion in the P 3̅ m 1 Fe 2 H monolayer accounts for a clear ferromagnetic transition. In addition, we note that the spin polarization ratio at the Fermi level, which can be obtained according to the following formula becomes 77.8% that is smaller than in a half-metal ferromagnet, comparable with 2D-MnGaN (79%), but higher than γ-CoSe (42%), and may be improved by an external regulation, such as a gate voltage and carrier doping.…”
Section: Resultsmentioning
confidence: 86%
See 1 more Smart Citation
“…Thus, the resulting Stoner criterion in the P 3̅ m 1 Fe 2 H monolayer accounts for a clear ferromagnetic transition. In addition, we note that the spin polarization ratio at the Fermi level, which can be obtained according to the following formula becomes 77.8% that is smaller than in a half-metal ferromagnet, comparable with 2D-MnGaN (79%), but higher than γ-CoSe (42%), and may be improved by an external regulation, such as a gate voltage and carrier doping.…”
Section: Resultsmentioning
confidence: 86%
“…becomes 77.8% that is smaller than in a half-metal ferromagnet, comparable with 2D-MnGaN (79%), 54 but higher than γ-CoSe (42%), 55 and may be improved by an external regulation, such as a gate voltage and carrier doping.…”
Section: Electronic and Magneticmentioning
confidence: 87%
“…[28][29][30][31] Strain engineering has been shown to be an effective approach to tune the magnetic properties of nanomaterials by substrate lattice mismatching. 21,28,[32][33][34][35] In particular, the strategies of heavy metal adsorption or the capping effect have also been found to exert a nontrivial influence on the MCA of several magnetic thin films, e.g. FeCo, Mn 3 Ga. 16,[36][37][38] Additionally, the substitutional doping of W into CrI 3 monolayers has been demonstrated to enhance interlayer FM coupling and the Curie temperature (T C ) significantly.…”
Section: Introductionmentioning
confidence: 99%
“…The strain dependence of magnetic anisotropy is of great importance in the design of novel materials and needs to be tuned to achieve technological applications of magnetic materials. For example, advanced ultrathin spintronic nanodevices with customized electronic and magnetic properties will need a local-strain engineering [1]. Historically, this problem has been recognized in investigations of magnetoelastic parameters in rareearth materials [2][3][4].…”
Section: Introductionmentioning
confidence: 99%