Local Structure Analysis of Ga1xInxN Alloy Using Extended X-Ray Absorption Fine Structure Measurements

Miyajima, T.; Y., Kudo,; Liu, K.-Y.; Uruga, Tomoya; Asatsuma, T.; Hino, T.; Kobayashi, T.

doi:10.1002/1521-3951(200111)228:1<45::aid-pssb45>3.3.co;2-r

Cited by 4 publications

(3 citation statements)

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“…The bond length of the first coordination shell was found to be the same in both samples, and is in the vicinity of the value of 2.15 Å in bulk InN (Miyajima et al, 2001). This result indicates that the In-N bond is similar to that in binary InN.…”

Section: Resultssupporting

confidence: 51%

“…The EXAFS technique is well established for investigating random solutions of III-V semiconductors (Mikkelsen & Boyce, 1983). InGaN alloys and quantum wells have been studied using EXAFS as well (Miyajima et al, 2001;O'Donnell et al, 1999O'Donnell et al, , 2002Kachankov et al, 2006). Respective bond lengths have also been predicted theoretically (Saito & Arakawa, 1999;Takayama et al, 2000).…”

Section: Introductionmentioning

confidence: 99%

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Local structure of uncapped and capped InGaN/GaN quantum dots

Piskorska‐Hommel

Schmidt

Siebert

et al. 2009

J Synchrotron Radiat

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The local structure around the indium atoms in uncapped and capped In(x)Ga(1-x)N quantum dots has been studied by In K-edge extended X-ray absorption fine structure (EXAFS) spectroscopy. The samples were grown by metal organic vapour phase epitaxy. The EXAFS was successfully applied to study the structural properties of buried quantum dots which are not optically active. The analysis revealed that capping the quantum dots with GaN does not affect the bond distances of the In-N and In-Ga, but makes the In-In distance shorter by 0.04 A.

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Section: Resultssupporting

confidence: 51%

Section: Introductionmentioning

confidence: 99%

Local structure of uncapped and capped InGaN/GaN quantum dots

Piskorska‐Hommel

Schmidt

Siebert

et al. 2009

J Synchrotron Radiat

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“…The measurements were difficult before because there was no useful facility generating the bright X-ray around a energy of 28 keV such as an 8 GeV storage ring of SPring-8. We have shown that SPring-8 is useful for the EXAFS measurements of In K-edge by investigating local structures of Ga 1--x In x N alloy with an indium content x < 0.20 using EXAFS measurements at SPring-8 [6]. 2.…”

Section: Introductionmentioning

confidence: 99%

Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method

Miyajima¹,

Kudo²,

Liu³

et al. 2002

phys. stat. sol. (b)

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We investigated the local atomic structure around In atoms of MBE-grown InN which has a direct bandgap energy of 0.8 eV, using extended X-ray absorption fine structure (EXAFS) oscillation of In K-edge. The signals from the first-nearest neighbor atoms (N) and second-nearest atoms (In) from In atoms were clearly observed and the atomic bond length of In-N and In-In was estimated to be d In-N ¼ 0.215 nm and d In-In ¼ 0.353 nm, respectively. The In-N bond length of d In-In ¼ 0.353 nm was closed to the a-axis lattice constant of a ¼ 0.3536 nm, which was determined using X-ray diffraction measurements. The obtained local atomic structure agreed with the calculated ideal structure. We conclude, therefore, that the InN film with a bandgap energy of 0.8 eV has a high structural symmetry in the range of a few A around In atoms.

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Theoretical Investigation of Indium Surface Segregation in InGaN Thin Films

Inahama

Akiyama

Nakamura

et al. 2005

e-J. Surf. Sci. Nanotechnol.

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Surface segregation of In atoms in InGaN thin films on GaN(0001) substrate is investigated by using Monte Carlo simulations based on an empirical potential, which incorporates electrostatic energy due to bond charge and ionic charges. The calculated In composition of the surface monolayer (ML) xs in In0.1Ga0.9N thin films ranging from 1 to 31 ML predicts that In atoms segregate at the topmost layer even in the film thickness t being larger than 3 ML. The xs at the topmost layer saturates when t reaches ∼15 ML, in which xs is much larger (xs ∼0.7) than the normal alloy composition (x ∼ 0.1). Furthermore, analysis of xs with respect to the bulk composition x up to 0.2 reveals that the propensity of In atoms for being segregated at the surface corresponds to the bond energy difference between InN and GaN. These calculated results imply that not only the release of elastic strains due to lattice mismatch between InN and GaN but also the preference of Ga-N bonds over InN bonds in the bulk region contributes the segregation of In atoms at the surface in InGaN thin films.

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Local Structure Analysis of Ga1xInxN Alloy Using Extended X-Ray Absorption Fine Structure Measurements

Cited by 4 publications

References 0 publications

Local structure of uncapped and capped InGaN/GaN quantum dots

Local structure of uncapped and capped InGaN/GaN quantum dots

Structure Analysis of InN Film Using Extended X-Ray Absorption Fine Structure Method

Theoretical Investigation of Indium Surface Segregation in InGaN Thin Films

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