and dielectric study as function of thickness of perovskite oxynitride SrTaO2N thin films elaborated by reactive sputtering. Surface and Coatings Technology, Elsevier, 2017, 324, pp.607-613. 10.1016/j.surfcoat.2016 A C C E P T E D M A N U S C R I P T
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AbstractThe present study concerns the deposition of perovskite oxynitride SrTaO 2 N films and their dielectric characterization at low frequencies. Those radio frequency sputtered thin films have been obtained under a reactive plasma (92.3 vol.% Ar / 7.7 vol.% N 2 ) for substrate temperatures ranging from 600 to 900°C. As shown by X-rays diffraction and band-gap measurements, the deposition temperature (T S ) determines the film structure and leads to films with band-gap and cell volume approaching the ones of the SrTaO 2 N bulk material with increased T S . The dielectric study has been performed on polycrystalline, textured and