Local structure investigation of Indium Oxynitride thin films by X-ray absorption fine structure

Abstract

Indium Oxynitride (InON) thin films prepared by Reactive gas-timing RF magnetron sputtering technique are investigated using X-ray absorption fine structure and first principle calculation. It was found from the former study[2] that optical and electrical properties of these films highly depended on its gas-timing ratio in the sputtering process. Therefore structural investigations of these films are required in order to describe the relation between the gas-timing ratio and their optical properties. The results show that local structure of the InON thin films consist of both indium oxide (In 2 O 3 ) and indium nitride (InN) phase.

XAFS analysis of indium oxynitride thin films grown on silicon substrates

“…XAFS is an atom selective and non‐destructive technique that is well known for solving chemical environments and local structure of materials and providing local structure parameters such as number and type of neighboring atoms, inter‐atomic distances and atomic disorders . This work provides more new information than our previous InON works in terms of XANES and EXAFS analysis on InON thin films grown on silicon substrates by reactive gas timing RF magnetron sputtering technique. Our additional results of the analysis will be discussed and compared with the previous works.…”