Local structure of 1.54-μm-luminescence Er3+ implanted in Si

Adler, D. L.; Jacobson, D. C.; Eaglesham, D. J.; Marcus, Matthew A.; Benton, J. L.; Poate, J. M.; Citrin, P. H.

doi:10.1063/1.108288

Cited by 248 publications

(107 citation statements)

References 12 publications

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“…Knowledge of the microscopic structures of the rare earth impurities in semiconductor hosts is very important for fabricating efficient injection-type light emitting devices. To understand the microscopic structures, the electron spin resonance ͑ESR͒ measurements, [1][2][3][4][5][6][7] the extended x-ray absorption fine structure ͑EXAFS͒ measurements, 8,9 and the Rutherford backscattering ͑RBS͒ channeling measurements [10][11][12][13] have been performed on Er-doped GaAs, Er-doped Si, and Yb-doped InP.…”

Section: Introductionmentioning

confidence: 99%

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Ishiyama

Katayama

Murakami

et al. 1998

Journal of Applied Physics

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We have performed electron spin resonance ͑ESR͒ measurements on Er-doped GaAs grown with oxygen codoping by metal organic chemical vapor deposition. An isotropic line ͑an effective g value, gϭ5.95) which had been already reported was observed in samples without oxygen codoping. On the other hand, for samples with oxygen codoping other strong anisotropic ESR lines originated from four kinds of Er 3ϩ (4 f 11 ) centers ͑A, B, C, and D͒ were newly observed in addition to the weaker isotropic line. The anisotropic g tensors obtained by analyzing the angular dependence of the ESR lines indicate that B and C centers are of orthorhombic C 2v symmetry, A center has lower symmetry than orthorhombic symmetry, and D center is of trigonal C 3i symmetry. The ESR intensities of A, B, and C centers were approximately two orders of magnitude higher than that of the isotropic line with gϭ5.95. The ESR intensity of D center was one order of magnitude lower than those of A, B, and C. The Er concentration dependence of the relative ESR intensities of these centers was investigated, which indicates ͑i͒ the ESR intensities of A and D increase with increasing Er concentration, and ͑ii͒ those of B and C are saturated above the Er concentration ͓Er͔ у10 18 cm Ϫ3 . The ESR measurement under light illumination, as well as the Er concentration dependence, suggests that the B center with C 2v symmetry corresponds to the dominant Er luminescent center under host photoexcitation.

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Section: Introductionmentioning

confidence: 99%

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Ishiyama

Katayama

Murakami

et al. 1998

Journal of Applied Physics

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“…Extended X-ray absorption fine structure (EXAFS) measurements of Er-implanted, high O impurity Czochralski-grown Si, which exhibit strong PL at 1.54 µm, show Er is six-fold coordinated to oxygen [8]. Strong PL can also be observed from Er and O coimplanted Si [9].…”

Section: Introductionmentioning

confidence: 82%

“…Strong PL can also be observed from Er and O coimplanted Si [9]. By contrast, in low O impurity FZ Si, no PL was observed and Er was coordinated with 12 Si atoms [8]. Contradictory Rutherford backscattering (RBS) measurements have indicated that Er implanted in Si is located [10], and is not located [11], at an interstitial site.…”

Section: Introductionmentioning

confidence: 94%

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

et al. 2014

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Abstract:We report the lattice site and symmetry of optically active Dy 3+ and Tm 3+ implanted Si. Local symmetry was determined by fitting crystal field parameters (CFPs), corresponding to various common symmetries, to the ground state splitting determined by photoluminescence measurements. These CFP values were then used to calculate the splitting of every J manifold. We find that both Dy and Tm ions are in a Si substitution site with local tetragonal symmetry. Knowledge of rare-earth ion symmetry is important in maximising the number of optically active centres and for quantum technology applications where local symmetry can be used to control decoherence. 3854-3856 (1996). 14. J. D. Carey, R. C. Barklie, J. F. Donegan, F. Priolo, G. Franzo, and S. Coffa, "Electron paramagnetic resonance and photoluminescence study of Er-impurity complexes in Si," Phys. Rev. B 59(4), 2773-2782 (1999 391-406 (1966). 24. R. M. Macfarlane, "Photon-echo measurements on the trivalent thulium ion," Opt. Lett. 18(22), 1958-1960 (1993). 25. J. B. Gruber, B. Zandi, and L. Merkle, "Crystal-field splitting of energy levels of rare-earth ions Dy 3+ (4f 9 ) and Yb 3+ (4f 13 ) in M(II) sites in the fluorapatite crystal Sr 5 (PO 4 ) 3 F," J. Appl. Phys. 83, 1009-1017 (1998). 26. U. Walter, "Treating crystal field parameters in lower than cubic symmetries," J. Phys. Chem. Solids 45(4), 401-408 (1984). 27. M. Lourenço, R. Gwilliam, and K. Homewood, "Eye-safe 2 μm luminescence from thulium-doped silicon," Opt. 699-762 (1989). 37. J. J. Baldoví, S. Cardona-Serra, J. M. Clemente-Juan, E. Coronado, A. Gaita-Ariño, and A. Palii, "SIMPRE: A software package to calculate crystal field parameters, energy levels, and magnetic properties on mononuclear lanthanoid complexes based on charge distributions," J. Comput. Chem. 34(22), 1961-1967 (2013). 38. J. J. Baldoví, J. M. Clemente-Juan, E. Coronado, A. Gaita-Ariño, and A. Palii, "An updated version of the computational package SIMPRE that uses the standard conventions for Stevens crystal field parameters," J.

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“…ErSi 2 ) and rare earth oxide precipitates in CZ Si (e.g. Er 2 O 3 ), we have now developed a model on the basis of simple diffusion and capture kinetics of Er and O, which allows us to compare possible scenarios to the experimental data.…”

Section: Resultsmentioning

confidence: 99%

“…Good optical activation of Er may be obtained, e.g., by Er implantation into O-rich Si (CZ Si or O co-doped Si) followed by annealing at high temperatures (900-1000°C). Extended X-ray absorption fine structure (EXAFS) experiments [2,3] have shown that this procedure results in the majority of Er within Er 2 O 3 -like surroundings, while Er implantation into oxygen-lean FZ Si produces an ErSi 2 -like neighbourhood. On the other hand, transmission electron microscopy (TEM) has revealed the formation of precipitates in both Er implanted CZ and FZ Si annealed at 900°C [4].…”

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confidence: 99%

The influence of oxygen on the lattice sites of rare earths in silicon

Wahl

Vantomme

Langouche

et al. 1998

Journal of Luminescence

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We have used conversion electron emission channeling to investigate the lattice sites of 167m Er following implantation of the radioactive isotope 167 Tm into CZ Si and FZ Si at varying doses (6×10 12 -5×10 13 cm -2 ). In all cases isothermal annealing at 900°C caused Er to leave its preferred near-tetrahedral sites in favour of random lattice sites, but this process occurred by orders of magnitude faster in CZ Si. Furthermore, in CZ Si the incorporation of Er on random lattice sites was fastest in samples implanted with low doses of Tm+Er. We compare our experimental results to a simple numerical model which accounts for the diffusion of Er and O and the formation of Er n O m complexes. On the basis of this model, our experimental data indicate that only a few (probably between 1 and 2) O atoms are required in order to remove an Er atom from its tetrahedral site.keywords: Si, Er, lattice location, Er diffusion, Er-O interaction * corresponding author phone: ++32-16-327617, fax: ++32-16-327985, email: ulrich.wahl@fys.kuleuven.ac.be IntroductionThe beneficial influence of oxygen on the luminescence properties of erbium in Si has been known for a couple of years [1]. Good optical activation of Er may be obtained, e.g., by Er implantation into O-rich Si (CZ Si or O co-doped Si) followed by annealing at high temperatures (900-1000°C). Extended X-ray absorption fine structure (EXAFS) experiments [2,3] have shown that this procedure results in the majority of Er within Er 2 O 3 -like surroundings, while Er implantation into oxygen-lean FZ Si produces an ErSi 2 -like neighbourhood. On the other hand, transmission electron microscopy (TEM) has revealed the formation of precipitates in both Er implanted CZ and FZ Si annealed at 900°C [4]. While the exact mechanisms of how O enhances the luminescence yield of Er are still a matter of debate, the binding of O to Er can be regarded as well-proven. As a complementary technique to EXAFS and TEM we use conversion electron emission channeling from the radioactive nucleus 167m Er in order to characterize the structural properties of Er in Si [5][6][7][8][9]. While EXAFS investigates the immediate neighbourhood of the Er atoms and TEM visualizes the crystalline quality on a nanoscale, emission channeling measures the position of the Er nucleus with respect to the lattice of a single crystal.

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Local structure of 1.54-μm-luminescence Er3+ implanted in Si

Abstract: Electrochemical Er doping of porous silicon and its roomtemperature luminescence at 1.54 μm Appl.

Cited by 248 publications

References 12 publications

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Electron spin resonance of Er–oxygen complexes in GaAs grown by metal organic chemical vapor deposition

Crystal field analysis of Dy and Tm implanted silicon for photonic and quantum technologies

The influence of oxygen on the lattice sites of rare earths in silicon

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