Local structure of indium oxynitride from x-ray absorption spectroscopy

T‐Thienprasert, Jiraroj; Nukeaw, Jiti; Sungthong, A.; Porntheeraphat, Supanit; Singkarat, S.; Onkaw, D.; Rujirawat, Saroj; Limpijumnong, Sukit

doi:10.1063/1.2965802

Cited by 39 publications

(27 citation statements)

References 19 publications

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“…As pointed out in a recent study [26] on indium oxy-nitride (wurtzite-type structure), the presence of a -white line‖ in In L 3 -edge XANES spectrum denotes the occurrence of non-occupied electronic states in indium atoms. The two shoulders observed in the spectra collected from the ore sample, separated by 10 eV (at 3732 eV and at 3742 eV), possibly indicate electronic transitions to unoccupied d states above the Fermi level and may be formally assigned to 2p  5s electronic transitions, enhanced by an s-d hybridization [27,28].…”

Section: Comments and Conclusionmentioning

confidence: 99%

Indium-Carrier Minerals in Polymetallic Sulphide Ore Deposits: A Crystal Chemical Insight into an Indium Binding State Supported by X-ray Absorption Spectroscopy Data

et al. 2012

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Indium is a typical chalcophile element of the Earth's crust, with a very low average content that seldom forms specific minerals, occurring mainly as dispersed in polymetallic sulphides. Indium recovery is based primarily on zinc extraction from sphalerite, the prototype of so-called tetrahedral sulphides, wherein metal ions fill half of the available tetrahedral sites within the cubic closest packing of sulphur anions, leaving interstices accessible for further in-filling. Ascertaining the tendency towards the establishment of In-In interactions through an x-ray absorption spectroscopy approach would efficiently contribute to understanding the behavior of indium in the carrier mineral. The successful results of applying such a near-edge absorption (XANES) study at In L 3 -edge to samples collected at the Lagoa Salgada polymetallic orebody in the Iberian Pyrite Belt (IPB) are described and the crystal chemistry of indium is re-evaluated, disclosing a potential clue for the metal binding state in polymetallic sulphides.

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Section: Comments and Conclusionmentioning

confidence: 99%

Indium-Carrier Minerals in Polymetallic Sulphide Ore Deposits: A Crystal Chemical Insight into an Indium Binding State Supported by X-ray Absorption Spectroscopy Data

et al. 2012

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“…InON thin films in this study were grown by reactive gas‐timing RF magnetron sputtering technique . The thin films with thickness of 1 µm were prepared on silicon substrates at room temperature.…”

Section: Methodsmentioning

confidence: 99%

“…With this reactive gas‐timing technique, thin films with different nitrogen and oxygen contents can be prepared by varying N 2 :O 2 gas‐timing ratio. Jiraroj et al . studied local structure of InON thin films deposited on polyethylene terephthalate substrates prepared by this reactive gas‐timing sputtering technique.…”

Section: Introductionmentioning

confidence: 99%

“…They performed X‐ray absorption near‐edge structure (XANES) simulation and suggested that InON thin films comprise both InN and In 2 O 3 phases. For InON with low oxygen contents, it has been reported that oxygen atoms are substituted in nitrogen sites of InN wurtzite structure . InON is unlike other semiconductor alloys, such as In x Ga 1−x N, in the sense that its parent materials have different crystal structure (hexagonal wurtzite structure for InN and cubic bixbyite structure for In 2 O 3 ).…”

Section: Introductionmentioning

confidence: 99%

“…XAFS is an atom selective and non‐destructive technique that is well known for solving chemical environments and local structure of materials and providing local structure parameters such as number and type of neighboring atoms, inter‐atomic distances and atomic disorders . This work provides more new information than our previous InON works in terms of XANES and EXAFS analysis on InON thin films grown on silicon substrates by reactive gas timing RF magnetron sputtering technique. Our additional results of the analysis will be discussed and compared with the previous works.…”

Section: Introductionmentioning

confidence: 99%

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XAFS analysis of indium oxynitride thin films grown on silicon substrates

et al. 2012

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Local structure of indium oxynitride thin films grown on silicon substrates was investigated by X-ray absorption fine structure technique incorporated with first principle calculations. The thin films were grown by using reactive gas timing radio frequency (RF) magnetron sputtering technique with nitrogen (N 2 ) and oxygen (O 2 ) as reactive gasses. The reactive gasses were interchangeably fed into sputtering system at five different time intervals. The gas feeding time intervals of N 2 :O 2 are 30 : 0, 30 : 5, 30 : 10, 30 : 20 and 10 : 30 s, respectively. The analysis results can be divided into three main categories. Firstly, the films grown with 30 : 0 and 30 : 5 s gas feeding time intervals are wurtzite structure indium nitride with 25 and 43% oxygen contaminations, respectively. Secondary, the film grown with 10 : 30 s gas feeding time intervals is bixbyite structure indium oxide. Finally, the films are alloying between indium nitride and indium oxide for other growth condition. The fitted radial distribution spectra, the structural parameters and the combination ratios of the alloys are discussed.

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Electro‐induced Crystallization Over Amorphous Indium Hydroxide Gels Toward Ampere‐Level Current Density Formate Electrosynthesis

Zhao,

Huang,

Liu

et al. 2024

Adv Funct Materials

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Electrochemical CO2 reduction reaction (CO2RR) provides a promising way for producing value‐added fuels and chemicals via renewable electricity. However, the dynamic reconstruction of electrocatalysts of atomic active sites hinders in‐depth understanding of catalytic mechanism and further industrial application, especially under ampere‐level current density conditions. In this work, electro‐induced crystallization is reported over an amorphous Indium hydroxide gel (In gel) catalyst, which generates active sites for efficient and selective CO2RR. Molecular dynamic calculation reveals the crystallization process can maintain amorphous In‐OH species on the surface while generating crystallized metallic In under electroreduction condition; structural characterizations prove that the derived partially crystallized In gel is stable consisting of amorphous/crystalline interface, even biased at a high polarization potential of −4 V versus reversible hydrogen electrode. The resultant partially crystalized In gel exhibits a highly selective CO2RR performance toward formate under an ampere‐level current density up to 1200 mA cm−2 simultaneously with 91.89% Faradaic efficiency, which can motivate a high formate generation rate of 20.55 mmol h−1 cm−2. The operando Raman spectroscopic and density functional theoretic results demonstrate the optimized adsorption of *HCOO intermediate for the enhanced formate activity and selectivity over the partially crystallized In gel.

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Local structure of indium oxynitride from x-ray absorption spectroscopy

Cited by 39 publications

References 19 publications

Indium-Carrier Minerals in Polymetallic Sulphide Ore Deposits: A Crystal Chemical Insight into an Indium Binding State Supported by X-ray Absorption Spectroscopy Data

Indium-Carrier Minerals in Polymetallic Sulphide Ore Deposits: A Crystal Chemical Insight into an Indium Binding State Supported by X-ray Absorption Spectroscopy Data

XAFS analysis of indium oxynitride thin films grown on silicon substrates

Electro‐induced Crystallization Over Amorphous Indium Hydroxide Gels Toward Ampere‐Level Current Density Formate Electrosynthesis

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