Local structures around<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mn>3</mml:mn><mml:mi>d</mml:mi></mml:math>metal dopants in topological insulator<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow><mml:mi mathvariant="normal">Bi</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:math>studied by EXAFS measurements

Liu, Zhen; Wei, Xinyuan; Wang, Jiajia; Pan, Hong; Ji, Fuhao; Xi, Fuchun; Zhang, Jing; Hu, Tiandou; Zhang, Shuo; Jiang, Zheng; Wen, Wen; Ye, Mao; Yang, Zhongqin; Qiao, Shuang

doi:10.1103/physrevb.90.094107

Cited by 20 publications

(17 citation statements)

References 38 publications

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“…This is attributed to the smaller size of the iron atom, which manifests itself in a shorter equilibrium Fe-Se bondlength of 2.37Å as in α-FeSe. Previous experimental and theoretical investigations dealing with 3d transition metal (TM) doped Bi 2 Se 3 alloy films are in excellent quantitative agreement with our results [45][46][47][48] . The first principles calculations of Abdalla et al 46 in general favor the bismuth substitutional site for iron, manganese and chromium over other sites such as the hcp or the fcc site discussed above.…”

Section: Functionssupporting

confidence: 91%

“…While these theoretical values are somewhat too large as compared to our results, recent x-ray spectroscopy experiments carried out for chromium doped Bi 2 Se 3 by Liu at al. 48 and by Figueroa et al 48 have revealed distances between 2.50 and 2.64Å, the latter for a two shell model similar to ours.…”

Section: Functionssupporting

confidence: 90%

“…We note that this shell is the only one which is affected by strong multiple scattering contribution by the intervening iron atom labelled by 2. All other parameters are within the normal range, except that the σ 2 for the third and fourth shell appear as somewhat enhanced as compared to previous EXAFS studies dealing with bulk FeSe 1−x Te x powder samples 45 or the chromium doped films 48 where values in the range between 0.003 and 0.006Å 2 were derived.…”

Section: B Thermally Annealed Iron On Bi2se3(0001)mentioning

confidence: 49%

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Surface alloying and iron selenide formation inFe/Bi2Se3(0001)observed by x-ray absorption fine structure experiments

et al. 2015

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The atomic structure of ultrathin iron films deposited on the (0001) surface of the topological insulator Bi2Se3 is analyzed by surface x-ray absorption spectroscopy. Iron atoms deposited on a Bi2Se3 (0001) surface kept at 160 K substitute bismuth atoms within the first quintuple layer. Iron atoms are neighbored by six selenium atoms at a distance in the 2.4Å range indicating substantial atomic relaxations. Mild annealing up to 520 K leads to the formation of α-FeSe, characterized by a local order extending up to the sixth shell (5.80Å). Ab-initio calculations predict a non-collinear magnetic ordering with a transition temperature of 3.5-10 K depending on the iron concentration and the number of the layers in which Fe is located.

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Section: Functionssupporting

confidence: 91%

Section: Functionssupporting

confidence: 90%

Section: B Thermally Annealed Iron On Bi2se3(0001)mentioning

confidence: 49%

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Surface alloying and iron selenide formation inFe/Bi2Se3(0001)observed by x-ray absorption fine structure experiments

et al. 2015

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“…It is clear that the exact nature in which Mn dopants, and other 3d impurities, incorporate in the host crystal is complex and still unresolved. X-ray absorption fine structure (XAFS) has previously been used to resolve such questions in Bi 2 Se 3 with other 3d dopants, 17,18 owing to its ability to study the local environment around impurities in an element-specific way. It may shed light on the role of Mn valency, structural relaxation and possible clustering in these materials.…”

Section: Discussionmentioning

confidence: 99%

“…Dopants have a tendency to enter the host both substitutionally and interstitially in the quintuple layers, as well as interstitially in the van der Waals gap, which leads to a number of possible magnetic ordering and chemical bonding scenarios. 14,17,18 In terms of their magnetic behavior, these systems will exhibit multiple magnetic phases, such as in the case of Mn-doped Bi 2 Se 3 of ferromagnetic ordering through Mn substitution on Bi or Se sites, antiferromagnetic ordering of Mn ensembles, and paramagnetic behavior of uncoupled Mn ions. Also, free carriers are introduced as a result of non-isoelectronic substitution on Bi or Se/Te sites, 17 arising from hybridization between the transition metal 3d state and the Se/Te p state, 19 which open up scattering channels for the TSS electrons.…”

Section: Introductionmentioning

confidence: 99%

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

et al. 2014

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We report the growth of Mn-doped Bi2Se3 thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mn is observed with increasing doping concentration. A magnetic moment of 5.1 μB/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μB/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L2,3 edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.

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Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

et al. 2021

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Inducing long‐range magnetic order in 3D topological insulators can gap the Dirac‐like metallic surface states, leading to exotic new phases such as the quantum anomalous Hall effect or the axion insulator state. These magnetic topological phases can host robust, dissipationless charge and spin currents or unique magnetoelectric behavior, which can be exploited in low‐energy electronics and spintronics applications. Although several different strategies have been successfully implemented to realize these states, to date these phenomena have been confined to temperatures below a few Kelvin. This review focuses on one strategy: inducing magnetic order in topological insulators by proximity of magnetic materials, which has the capability for room temperature operation, unlocking the potential of magnetic topological phases for applications. The unique advantages of this strategy, the important physical mechanisms facilitating magnetic proximity effect, and the recent progress to achieve, understand, and harness proximity‐coupled magnetic order in topological insulators are discussed. Some emerging new phenomena and applications enabled by proximity coupling of magnetism and topological materials, such as skyrmions and the topological Hall effect, are also highlighted, and the authors conclude with an outlook on remaining challenges and opportunities in the field.

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Local structures around3dmetal dopants in topological insulatorBi2Se3studied by EXAFS measurements

Cited by 20 publications

References 38 publications

Surface alloying and iron selenide formation inFe/Bi2Se3(0001)observed by x-ray absorption fine structure experiments

Surface alloying and iron selenide formation inFe/Bi2Se3(0001)observed by x-ray absorption fine structure experiments

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi2Se3 thin films

Recent Progress in Proximity Coupling of Magnetism to Topological Insulators

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