2001
DOI: 10.1063/1.1377624
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Local trap spectroscopy in superconducting tunnel junctions

Abstract: We show that thermal activation of quasiparticles from local traps is responsible for the temperature variation of responsivity observed for some superconducting tunneling junction photon detectors. With this model, the depth of the local traps in two different proximized Ta structures was found to be the same, 0.20±0.02 meV.

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Cited by 21 publications
(33 citation statements)
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“…22,23 We showed earlier 24,25 that the kinetics of qps and phonons in nonequilibrium superconductors cannot be adequately described without taking explicit account of the interaction between the mobile qps and phonons and the trapped qps. The microscopic nature of the defects responsible for the trapping states in a particular superconductor is often uncertain.…”
Section: Kinetic Description Of Nonequilibrium Quasiparticles Andmentioning
confidence: 99%
“…22,23 We showed earlier 24,25 that the kinetics of qps and phonons in nonequilibrium superconductors cannot be adequately described without taking explicit account of the interaction between the mobile qps and phonons and the trapped qps. The microscopic nature of the defects responsible for the trapping states in a particular superconductor is often uncertain.…”
Section: Kinetic Description Of Nonequilibrium Quasiparticles Andmentioning
confidence: 99%
“…A second experiment highlighting the role of QP trapping is the measurement of the temperature dependence of responsivity, and therefore, of QP lifetime, 11 as illustrated in Fig. 11 for x-ray and optical photons for a tantalum sample, with the data for both normalized to the value at 600 mK showing the effects both of detrapping and thermal recombinations.…”
Section: Analysis Of Existing Experimental Datamentioning
confidence: 99%
“…15͒ so that trap ϳ 1.8/ c ns. The observed lifetimes in Ta, at such low temperatures that thermal recombination is absent, are typically several tens of microseconds 11,[18][19][20][21][22][23] leading to an estimate for c of between 1 ϫ 10 −5 and 1 ϫ 10 −4 or a range of impurity concentration of 10-100 ppb. Thus even if the state were not strongly localized, for example, say ͑a 2 / a 0 ͒ 4 Ӎ 100, in order to produce the observed QP lifetimes in Ta at low temperature, it would require a concentration of only 1-10 ppm.…”
Section: B Continuum-bound Trappingmentioning
confidence: 99%
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“…The increase in charge output at higher temperatures is explained by the enhanced de-trapping mechanism due to phonon absorption, which is of course more effective at higher temperatures. Strong temperature dependencies of the charge output have already been observed in Ta based STJs [11], but these results were obtained at optical wavelengths. At higher photon energies the temperature dependence for such Ta based devices vanishes because the number of traps is no longer of importance when compared to the number of QPs in the junction.…”
mentioning
confidence: 84%