Localised Tuneable Composition Single Crystal Silicon-Germanium-on-Insulator for Low Cost Devices

Abstract

The realisation of high quality silicon-germanium-on-insulator (SGOI) is a major goal for the field of silicon photonics because it has the potential to enable extremely low power active devices functioning at the communication wavelengths of 1.3 m and 1.55 m. In addition, SGOI has the potential to form faster electronic devices such as BiCMOS transistors and could also form the backbone of a new silicon photonics platform that extends into the mid-IR wavelengths for applications in, amongst others, sensing and telecoms. In this paper, we present a novel method of forming single crystal, defect-free SGOI using a rapid melt growth technique. We use tailored structures to form localised uniform composition SGOI strips, which are suitable for the state-of-the-art device fabrication. This technique could pave the way for the seamless integration of electronic and photonic devices using only a single, low cost Ge deposition step.

Fabrication of ultrathin poly-crystalline SiGe-on-insulator layer for thermoelectric applications

“…An ultrathin SiGe-on-insulator (SGOI) layer is essential to fabricate the SiGe nanowire by lithographic technology. In the field of ULSI devices, such as a metal-oxide-semiconductor transistor, there are a variety of fabrication methods of single-crystalline SiGe (sc-SiGe) thin film grown on SiO 2 /Si substrates [24][25][26][27][28][29][30][31][32]. Most of them are difficult and costly since their process is complicated and is not fit for a large-area formation.…”