Localization effects on recombination dynamics in InAs/InP self-assembled quantum wires emitting at 1.5 μm

Abstract

Articles you may be interested inRaman study of self-assembled InAs/InP quantum wire stacks with varying spacer thickness J. Appl. Phys. 104, 033523 (2008) We have studied the temperature dependence of the photoluminescence of a single layer of InAs/ InP(001) self-assembled quantum wires emitting at 1.5 lm. The non-radiative mechanisms responsible for the quenching of the emission band have been identified. The exciton dynamics has been investigated using time resolved photoluminescence measurements. The results have been explained through the interplay between free excitons and localized states (arising from size fluctuations in the quantum wires).

Purcell effect in photonic crystal microcavities embedding InAs/InP quantum wires

“…E r r r r E r r r r (9) where V stands for the volume of the optical mode, which can be substituted by the cavity volume (V CAV ) for tightly confined modes. We introduce the shape function H(r-r e ), to account for the spatial extension of the emitter centered at r e .…”

“…Ideally, the density-of-states (DOS) in a QD is described by a series of Dirac's deltas while in the case of QWs and QWRs it is a continuum of states above the fundamental transition, an important fact for technological applications like nano-lasers. InAs/InP QWRs can be used for devices working at two important optical telecom windows in 1.3 and 1.5 µm [9][10][11]. They also exhibit efficient luminescence and lasing even at 1.6 µm [12].…”

Excitation power dependence of the Purcell effect in photonic crystal microcavity lasers with quantum wires

“…The non-radiative recombination processes are negligible at this temperature (77 K) for this type of QWRs as follows from the analysis performed in Ref. 15. The best fitting is obtained for ß ¼ 0.15,…”

“…13,14 In addition, the nanostructures based on InAs/InP enable the fabrication of light sources at the spectral windows of interest from the technological point of view (1.31 and 1.55 lm). 15,16 Since the early demonstration of lasing action in QWR-based devices, 17 further improvements have been made in the performance of the host optical cavities. PCMs have provided low threshold powers in QWR lasers at low 18 and room temperature.…”

“…More details about growth, morphology, and low temperature emission properties of the QWRs can be found in Ref. 15. The L7-type PCMs were fabricated by removing seven holes along the C-K direction of a triangular lattice.…”