Localization-enhanced biexciton binding in semiconductors

Langbein, Wolfgang Werner; Hvam, Jørn Märcher

doi:10.1103/physrevb.59.15405

Cited by 50 publications

(47 citation statements)

References 33 publications

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“…These systems show nontrivial Coulomb correlation effects leading to interesting optical and transport characteristics not seen in bulk materials. A strong increase of the binding energy of the excitonic complexes was found experimentally [1,2,3,4,5,6,7,8,9,10] with decreasing quantum well (QW) width and increasing magnetic field [11].…”

Section: Introductionmentioning

confidence: 99%

“…[10] and circular symbols with a plus sign are obtained from the stochastic variational calculations [13,14]. Full (dashed) lines with small symbols are PIMC results when the localization is included (not included).…”

Section: A Exciton Binding Energymentioning

confidence: 99%

“…Quasi-two-dimensional systems like GaAs QW's have been extensively investigated in the last years, both experimentally [1,2,4,5,6,7,8,9,10] and theoretically [12,13,14,15,16].…”

Section: Numerical Simulation Approachmentioning

confidence: 99%

“…[4,5,6,7,8,9,10] (symbols in figure). In the case of an isotropic hole mass, we found that with localization taken into account (full line in Fig.…”

Section: B Binding Energy Of Positive and Negative Trionsmentioning

confidence: 99%

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Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons inGaAs-based quantum wells

et al. 2004

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We present a first-principle path integral Monte-Carlo (PIMC) study of the binding energy of excitons, trions (positively and negatively charged excitons) and biexcitons bound to single-island interface defects in quasi-two-dimensional GaAs/Al x Ga 1−x As quantum wells. We discuss in detail the dependence of the binding energy on the size of the well width fluctuations and on the quantum-well width. The numerical results for the well width dependence of the exciton, trions and biexciton binding energy are in good quantitative agreement with the available experimental data.

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Section: Introductionmentioning

confidence: 99%

Section: A Exciton Binding Energymentioning

confidence: 99%

“…Quasi-two-dimensional systems like GaAs QW's have been extensively investigated in the last years, both experimentally [1,2,4,5,6,7,8,9,10] and theoretically [12,13,14,15,16].…”

Section: Numerical Simulation Approachmentioning

confidence: 99%

“…[4,5,6,7,8,9,10] (symbols in figure). In the case of an isotropic hole mass, we found that with localization taken into account (full line in Fig.…”

Section: B Binding Energy Of Positive and Negative Trionsmentioning

confidence: 99%

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Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons inGaAs-based quantum wells

et al. 2004

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“…The observed increase of the biexciton binding energy is attributed to the stronger spatial localization in the energetically deeper localized states, similar to what has been found in other localized systems. 30 A direct determination of the biexciton binding-energy distribution from the FWM spectra can be achieved by selecting a narrow distribution of (0-X) transitions with a spectrally narrow k 1 pulse. 31 FWM spectra for the ͑↑→͒ configuration and a k 1 spectral width of 1 meV are given in Fig.…”

mentioning

confidence: 99%

Exciton dephasing and biexciton binding in CdSe/ZnSe islands

et al. 1999

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Biexciton Binding Energy in ZnSe Quantum Wells and Quantum Wires

Wägner

Tranitz

Langbein

et al. 2002

phys. stat. sol. (b)

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The biexciton binding energy E XX is investigated in ZnSe/ZnMgSe quantum wells and quantum wires as a function of the lateral confinement by transient four-wave mixing. In the quantum wells one observes for decreasing well width a significant increase in the relative binding energy, saturating for well widths less than 8 nm. In the quantum wires an increase of 30% is found in the smallest quantum wire structures compared to the corresponding quantum well value. A simple analytical model taking into account the quantum confinement in these low-dimensional systems is used to explain the experimentally observed dependence of the biexciton binding energies.

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Localization-enhanced biexciton binding in semiconductors

Cited by 50 publications

References 33 publications

Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons inGaAs-based quantum wells

Influence of well-width fluctuations on the binding energy of excitons, charged excitons, and biexcitons inGaAs-based quantum wells

Exciton dephasing and biexciton binding in CdSe/ZnSe islands

Biexciton Binding Energy in ZnSe Quantum Wells and Quantum Wires

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