We report an experimental study of the emission statistics of excitonic complexes from a single quantum dot and their temperature dependence. The single photon emission from the exciton ground state is shown to persist up to 80 K. The deterioration of single photon statistics is attributed to new biexciton emissions, which emerge in the vicinity of the main single-exciton peak at rising temperatures. We identify these biexcitonic states as being formed by either one hole or two holes occupying excited states and analyze their specific polarization and power-dependent signature.The rapidly evolving field of quantum information technology relies on nonclassical emission sources capable of emitting single photons at predetermined times and with well-established spectral and temporal characteristics. These sources are required for the implementation of quantum computation 1,2 and quantum communication protocols. 3 An atom considered as a two-level quantum system emits spontaneously antibunched photons when it is excited because the emission of one photon resets the system in its ground state and a subsequent emission cannot occur immediately afterwards. A single semiconductor quantum dot ͑QD͒ is often described as the solid-state analog of an atom since threedimensional confinement results in a discrete energy spectrum. Unlike an atom, however, a QD is incorporated in a solid-state environment that introduces carrier-lattice interaction. Hence, the atomic-like picture of the unperturbed ground state, which can serve as a quantum emitter 4 at low enough temperature ͑around 10 K͒, partially breaks down at elevated temperatures when excited states are being occupied and when electron-phonon interaction broadens the optical transitions. The interaction with the solid-state environment is thus expected to also have an impact on the statistics of photons emitted by QD excitons, particularly at elevated temperatures. An understanding of this impact is particularly important for the realization of practical solid-state single photon emitters operating at sufficiently high ͑e.g., T Ͼ 77 K͒ temperatures.The temperature dependence of the features of single photon emission from semiconductor QDs has been left so far largely unexplored; there are only few studies of high temperature ͑Ͼ40 K͒ photon emission statistics from epitaxially grown QDs. 5 In this paper we report on an experimental study of the temperature dependence of the photon antibunching from single pyramidal InGaAs/ AlGaAs QDs. Extending our previous work, 6 we demonstrate single photon statistics of the exciton ͑X͒ emission from 10 K up to 80 K. This is the highest temperature for which photon antibunching is reported for such a material system. By using single photon correlation measurements combined with a quantitative analysis of the emission spectra, we find that emission from other transitions related to the QD ground state, such as biexciton ͑2X͒ and positively charged exciton ͑X + ͒ cannot cause a disappearance of photon antibunching. Instead, we identify th...