Localization of the Fe°-level in silicon

Feichtinger, H.; Waltl, J.; Gschwandtner, A.

doi:10.1016/0038-1098(78)90194-1

Cited by 58 publications

(12 citation statements)

References 11 publications

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“…Looking more closely at the Fe i impurity, we confirm that it gives rise to a single donor level, calculated at E v + 0.33 eV (only 0.05 eV below the well established transition measured by DLTS 8,9 ). Inspection of further ionization and a comparison with the Fe i B s defect allowed us to conclude that Fe i (+/ ++) is resonant with the valence of the host.…”

Section: Discussionsupporting

confidence: 72%

“…3,4 When dissolved in a Si crystal, Fe atoms occur mostly as interstitial impurities (Fe i ) occupying tetrahedral interstitial sites. This defect is relatively well understood, and spectroscopic signals obtained through electron paramagnetic resonance (EPR), electron-nuclear double resonance, [5][6][7] deep-level transient spectroscopy (DLTS), 8,9 emission channeling, 10,11 and Mössbauer spectroscopy (MS) 12,13 have been reported extensively. Interstitial Fe in Si becomes mobile above roomtemperature.…”

Section: Introductionmentioning

confidence: 99%

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Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Wright

Coutinho

Öberg

et al. 2016

Journal of Applied Physics

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We employ a combination of pseudopotential and all-electron density functional calculations, to relate the structure of defects in supercells to the isomer shifts and quadrupole splittings observed in Mössbauer spectroscopy experiments. The methodology is comprehensively reviewed and applied to the technologically relevant case of iron-related defects in silicon, and to other group-IV hosts to a lesser degree. Investigated defects include interstitial and substitutional iron, iron-boron pairs, iron-vacancy and iron-divacancy. We find that in general, agreement between the calculations and Mössbauer data is within a 10% error bar. Nonetheless, we show that the methodology can be used to make accurate assignments, including to separate peaks of similar defects in slightly different environments.

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Section: Discussionsupporting

confidence: 72%

Section: Introductionmentioning

confidence: 99%

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Wright

Coutinho

Öberg

et al. 2016

Journal of Applied Physics

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“…[2][3][4][5] This can be very detrimental to device region of the wafer, as strain fields and process induced defects can localize the Fe impurities in this sensitive area. 6 It is well accepted that iron contamination degrades gate oxide integrity and decreases yield as devices are scaled to sub-micron dimensions.…”

Section: Introductionmentioning

confidence: 99%

Iron precipitation in float zone grown silicon

Henley

Ramappa

1997

Journal of Applied Physics

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Temperature dependent iron precipitation in float zone grown silicon wafers has been experimentally investigated. Results of iron precipitation experiments over a wide thermal process temperature range and time are presented. Precipitation of iron in silicon was analyzed by a quantitative assessment of change in interstitial iron using a surface photovoltage minority carrier lifetime analysis technique. Contamination levels of iron in the range 10 11 -10 13 atoms/cm 3 are investigated. It is concluded that maximum iron precipitation occurs in the temperature range of 500-600°C. Iron precipitation is rapid in this region where more than 90% of the interstitial iron precipitates in a period of 30 min.

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“…The thorough study of the specialty literature points out that besides the dark current spectroscopy method, the most important experimental methods intended to the characterization of impurities and/or defects from semiconductors are the DLTS method (especially) and the TSCa one. For the above indicated reasons, many experimental works report the results obtained by means of both (a) DLTS and TSCa methods (e.g., [69][70][71]), (b) DLTS and EPR [72,73], (c) DLTS and Hall [74], (d) Hall and EPR methods [75,76], and so forth. We have to underline that the DLTS method allows to (a) point out the character (acceptor or donor, resp.)…”

Section: Short Review Of the Main Experimental Methods Used To Characmentioning

confidence: 99%

Charge Coupled Devices as Particle Detectors

Iordache

Sterian

Tunaru

2013

Advances in High Energy Physics

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As it is well known, while the most important advantages of the charge coupled devices, as high energy particle detectors are related to their (a) extremely high sensitivity (very important for the underground laboratories, also) and (b) huge number of very small independent components (pixels) of the magnitude order of106, which allow the separate impressions of many different “signatures” of (silicon lattice defects produced by) these particles, their main disadvantages refer to the (a) difficulty to distinguish between the capture traps (of free electrons and holes, resp.) produced by the radiation particles and the numerous types of traps due to the contamination or dopants and (b) huge number of types of lattice defects due to the irradiation. For these reasons, this work achieves a state of art of the (i) main experimental methods and (ii) physical parameters intended to the characterization of the main types of traps embedded in the silicon lattice of CCDs. There were identified also some new physical parameters useful in this aim, as the polarization degree of capture cross-sections and the state character, as well as some new useful notions, as the trans-Fermi level capture states.

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Localization of the Fe°-level in silicon

Cited by 58 publications

References 11 publications

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Mössbauer parameters of Fe-related defects in group-IV semiconductors: First principles calculations

Iron precipitation in float zone grown silicon

Charge Coupled Devices as Particle Detectors

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