Localized Backside Etching Structure of SOI Substrates on Total Ionizing Dose Effect Hardening for RF Applications

The impacts of localized backside etching on proton radiation response in SOI passive devices

“…21,22) The equivalent ionization dose of our experiment with energy = 50 MeV, fluence = 1 × 10 12 p cm −2 is approximately 150 krad(Si). Previous research indicates that the additional ionization-induced oxide charges contribute to more severe PSC effects and RF losses 26) For the proton irradiation, the decrease in attenuation in the experiment indicates that the proton irradiation-induced displacement damage predominates, and the ionization damage cannot compensate for its effect. A schematic of the damage (a) (b) mechanism concerning the PSC effect is shown in Fig.…”