Localized growth and in situ integration of nanowires for device applications

Abstract

Simultaneous localized growth and device integration of inorganic nanostructures on heated micromembranes is demonstrated for single crystalline germanium and tin oxide nanowires. Fully operating CO gas sensors prove the potential of the presented approach. With this simple CMOS compatible technique, issues of assembly, transfer and contact formation are addressed.

Localized aerosol-assisted CVD of nanomaterials for the fabrication of monolithic gas sensor microarrays

“…CVD via localized heating has been mainly used for CNT synthesis [7], and although some attempts have also been reported for the synthesis of other materials, e.g. MOX-NSs [8], the impact of a non-isothermal environment in the properties of materials remains largely unexplored, and some drawbacks of traditional CVD, such as the high onset temperatures (up to 1000 • C or more) for formation of nanostructures, the need of volatile precursors and the requirement of vacuum environment, are still present [9]. AACVD, as an evolution of conventional CVD, has the peculiarity of forming functional NSs at relatively low temperatures (400 • C), at atmospheric pressure, high deposition rates and without requiring the use of volatile precursors [4b,10], which highlights the advantages of this method for the vapor-phase synthesis of MOX-NSs via localized heating [11].…”

Nitric oxide sensors using nanospiral ZnO thin film deposited by GLAD for application to exhaled human breath

“…However, the limit of detection (LOD) of NO gas in human breath using these metal oxide-based sensors still needs improvement. [20][21][22] Assembling sensing materials into porous and nano-sized structures to form active surfaces is an effective method to enhance the sensitivity, selectivity, as well as the response and recovery speed of NO gas sensors. [23][24][25] However, to explore large-scale synthesis technology of nanostructures with a specic morphology by a controllable and reproducible chemical route, and to establish the relationship between a specic nanostructure and its physicochemical properties, are always challenging.…”

A Multipurpose CMOS Platform for Nanosensing

“…Considering the sensing purposes, the nanomaterial should be exposed to the external agent and therefore it has to be assembled onto the top electrodes of the CMOS technology using post-processing techniques [9]. For instance, some techniques involve the direct growth of nanowires on metal microelectrodes using seeds or self-assembly layers [10]. Unfortunately, these methods are not always compliant with post-processing on CMOS because of the need of chemical processes at high temperature that can cause rediffusion of the active area of CMOS transistors or deformations in the metal of interconnections.…”