Localized Impurity Level and Carrier Concentration in Self‐Intercalated TiS₂ Crystals

Abstract

The a-and c-axis resistivities and Hall coefficients of self-intercalated IT-CdI, type layered crystals of TiS, are measured over the temperature range 1.5 to 300 K. The temperature dependence of the carrier concentration a t low temperatures T < 150 K c m be explained by a simple model which takes into account both, the host Ti 3d conduction band and a localized impurity level Ei due to excess Ti atom. The position of Ei is found to lie by about 5 meV above the Fermi energy. The self-intercalated Ti atoms become ionized impurity scattering centers as Ti4f and Ti3f ions, whose relaxation times are calculated to give a good fit to the observed residual resistivity vs. carrier concentration curve.

Electrical Resistivity and Thermoelectric Power of Intercalation Compounds MxTiS2 (M = Mn, Fe, Co, and Ni)

“…1 shows the temperature dependences of a) the electrical resistivities Q and b) the thermopowers S for the host TiS, and Mn,TiS,. The resistivities of Mn,TiS, and other intercalates M,TiS, (M = Fe, Co, Ni) show a metallic behavior similar to that of host TiS, [4]. The thermopowers as well as the Hall coefficients of Mn,TiS, are found to be all negative over the whole temperature range, indicating that the conduction carriers are electrons due to a charge transfer from the intercalated 3d metals.…”

Momentum microscopy of the layered semiconductor TiS2and Ni intercalated Ni1/3TiS2

“…Studies of two-dimensional (2D) van der Waals materials have grown extensively to elucidate their extraordinary electronic properties [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15], which are considered to be of high technological importance. Various 2D materials are attracting much interest because of the possible modification of their bulk-, surfaceelectronic, and magnetic properties by physical and/or chemical means by impurity doping, alloying, surface deposition/adsorption, or chemical reaction [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Even the surfaces of host 2D materials show characteristic electronic and magnetic properties due to the combination of spin-orbit coupling and time-reversal symmetry, for instance, in the case of topological insulators, a class of materials under hot debate today [1,16].…”

Coulomb-driven cluster-glass behavior in Mn-intercalated Ti1+yS2

“…In the particular case of TiS 2 , the fabrication process results in significant self-intercalation of Ti atoms. [16][17][18] As an intercalant, Ti tends to form Ti 3+ or Ti 4+ ions. 17 These highly charged ions will alter the distribution of the magnetic ions that may also be present as intercalants, which in turn will impact the magnetic characteristics of the system.…”

“…[16][17][18] As an intercalant, Ti tends to form Ti 3+ or Ti 4+ ions. 17 These highly charged ions will alter the distribution of the magnetic ions that may also be present as intercalants, which in turn will impact the magnetic characteristics of the system. 6 In this paper, we present experimental evidence that the spin-glass-like relaxation behavior that we have observed in Mn 0.09 Ti which was explained on the basis of an exponential distribution of dipolar clusters.…”