Localized nature of the luminescence during galvanostatic anodizing of high purity aluminium in inorganic electrolytes

Shimizu, K.; Tajima, S.

doi:10.1016/0013-4686(80)90003-1

Cited by 35 publications

(23 citation statements)

References 13 publications

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“…The influence of aluminum surface pretreatment conditions (chemical treatment and annealing of the samples) were in accordance with previously published results for GL measurements in inorganic electrolytes that form both barrier and porous oxide films, where GL is correlated to the existence of "flaws" in oxide films, generated by impurities from the surface [17][18][19][20]. Explicitly, for anodization voltage below breakdown voltage GL intensity is the strongest with degreased samples, while it significantly decreases with the chemically cleaned samples and almost disappears with electropolished samples.…”

Section: Gl Properties Of Barrier Oxide Filmssupporting

confidence: 85%

Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

Stojadinović

Vasilić

Petković

et al. 2010

Electrochimica Acta

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Section: Gl Properties Of Barrier Oxide Filmssupporting

confidence: 85%

Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

Stojadinović

Vasilić

Petković

et al. 2010

Electrochimica Acta

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“…This value is closed to the growth rate of the barrier layer observed in the acidic media and formed by the same mechanism [19]. From around 120 V, electrochemically induced luminescence occurs, and some gas release is observed, which can be explained by the presence of ionic defaults as F + -centre or charged oxygen vacancies in the thin alumina layer, as mentioned by several authors [20][21][22]. Indeed, according to Kulmala S et al [23], the energy corresponding to the redox potential of O 2 /H 2 O couple is compatible with the energy of F-centre in the gap of alumina, due to the oxygen vacancies (noted V O ·· according the Kroger Vink notation).…”

Section: Discussion: Effect Of Copper-rich Intermetallic Particlesmentioning

confidence: 69%

Initial stages of multi-phased aluminium alloys anodizing by MAO: micro-arc conditions and electrochemical behaviour

Veys‐Renaux

Rocca

2015

J Solid State Electrochem

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International audienceThe electrochemical behaviour of AA1050 and AA2214 alloys was studied in a KOH/silicate in order to investigate the first stages of the coating formation during MAO process (by SEM and electrochemical measurements). Before the sparking initiation, occurring around 300 V for both alloys, a thin inner layer of aluminium oxide grows by a classical anodizing mechanism, and induces a great enhancement of the electrochemical resistance. Then, the micro-arc regime beyond 300 V leads to the formation of a dense, thicker but cracked external aluminium oxide layer. Afterwards, from 400 V, a sharp increase of current density named ``current wall'' and due to an increase of oxide conductivity, leads to a significant oxygen release and the occurrence of large and energetic sparks. Microscopic analyses reveal that the presence of copper-rich intermetallic phases in the multi-phased alloy (AA2214) induces the incorporation of copper nanoparticles in the gamma-alumina layer formed by the sparking phenomenon. These copper particles increase the reaction of water oxidation during the classical anodizing stage, and result in a delay of the sparking initiation during the galvanostatic anodizing and in a lower electrochemical resistance of the anodized layers

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“…These results seem in good accord with that of the RBS. And the reason for the low value of anodizing ratio at high voltages is regarded as the fact that, with applying high voltages, the anodic oxide surface is formed irregularly, because electro discharging phenomena and gas evolution take place violently on the surface [20,21] and such defects cause the decrease in the efficiency of film formation.…”

Section: Resultsmentioning

confidence: 99%

Effects of potential and heat treatment on phase transition of alumina dielectric layer

Lee

Ahn

et al. 2006

J Electroceram

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The characteristics and growth behaviors of alumina dielectric layer formed by anodic oxidation were investigated. The aluminum oxide layer anodized at 400 V was predominantly amorphous alumina, but at the applied potentials more than 500 V, amorphous and crystalline γ -alumina were existed in anodic oxide layer and the ratio of γ -alumina increased with the increasing applied potential. During the heat treatment at 600 • C or higher temperature, amorphous alumina layer was transformed into the crystalline γ -alumina. The phase transition of anodic amorphous alumina into crystalline depends on anodic applied potentials and heat-treatment temperatures.

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Localized nature of the luminescence during galvanostatic anodizing of high purity aluminium in inorganic electrolytes

Cited by 35 publications

References 13 publications

Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

Luminescence properties of oxide films formed by anodization of aluminum in 12-tungstophosphoric acid

Initial stages of multi-phased aluminium alloys anodizing by MAO: micro-arc conditions and electrochemical behaviour

Effects of potential and heat treatment on phase transition of alumina dielectric layer

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